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The JANTX2N4854 is a silicon dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features an NPN/PNP complementary configuration housed in a TO-78-6 hermetic package designed for through-hole mounting. The device supports a maximum DC collector current of 600 mA and operates with a collector-emitter voltage (VCEO) of 40 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. Power dissipation is rated at 2 W, allowing operation within a temperature range of -65°C to +200°C. The component exhibits a collector-emitter saturation voltage of 400 mV, with a DC current gain (hFE) ranging from a minimum of 60 to a maximum of 300.
Verify the specific revision level and lot traceability documentation upon order confirmation. Ensure that the procurement channel provides valid military compliance certificates. Confirm that the TO-78-6 package dimensions match the design constraints. Validate that the supplier can provide necessary export control classifications if applicable.
Select this component when a compact dual BJT solution is required for high-temperature applications. Compare the 2 W power dissipation rating against the circuit's thermal requirements. Verify that the 600 mA current limit meets the load demands. Consider the TO-78-6 footprint compatibility during the PCB layout phase.
This part belongs to the 2N4854 series of dual small-signal transistors produced by Microchip Technology. It serves as a specialized variant within the company's broad portfolio of discrete semiconductors. The series is engineered to meet stringent performance standards for critical electronic applications.
The JAN2N4854U/TR is a surface-mount alternative in a U-6 package with lower power dissipation. The standard 2N4854 offers identical electrical characteristics but lacks the TX military grade designation.