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The JANTX2N4857 is an N-channel silicon small-signal Junction Field-Effect Transistor (JFET) manufactured by Microsemi. It utilizes a TO-18 metal can package and operates in depletion mode. The device supports a maximum drain-source voltage of 40 V and a gate-source voltage of -40 V. Key electrical characteristics include a maximum drain-gate voltage of 40 V, a maximum power dissipation of 0.36 W, and a maximum feedback capacitance of 8 pF. It functions within an ambient temperature range of -65 °C to +200 °C.
Verify the specific revision level and lot traceability documentation required for your procurement. Confirm that the component meets the necessary military qualification standards for your project. Ensure compatibility with existing thermal management designs due to the metal package construction. Review all absolute maximum ratings before integration into the final circuit design.
Select this component when a ruggedized N-channel JFET is required for high-temperature environments. Compare its 40 V breakdown voltage against circuit requirements. Evaluate the 0.36 W power dissipation limit against thermal constraints. Consider the TO-18 package dimensions for board layout compatibility.
This part belongs to the 2N4856 through 2N4861 series of N-channel JFETs. The 'JANTX' prefix indicates a specific quality and screening level within the manufacturer's portfolio. These devices are designed for use in applications requiring robust performance under extreme conditions.
Direct equivalents include the JAN2N4857 and JANTXV2N4857 from the same series. Verify pinout compatibility and ensure that alternative manufacturers meet the same MIL-PRF-19500 specifications.