JANTX2N7372

Single Bipolar Transistors Overview

The JANTX2N7372 is a PNP silicon power bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a TO-254 through-hole package and is designed for high-speed power switching applications. Key electrical parameters include a collector-emitter breakdown voltage of 80 V, a continuous collector current of 5 A, and a maximum power dissipation of 4 W. The device operates within a temperature range of -65°C to +150°C. DC current gain (hFE) is specified with a minimum value of 70 at a collector current of 2.5 A and collector-emitter voltage of 5 V.

Single Bipolar Transistors Feature Summary

• Designed for high-speed power switching applications
• PNP silicon construction in a TO-254 through-hole package
• Capable of handling 5 A continuous collector current

Single Bipolar Transistors Applications

• High-speed power switching circuits
• Power amplifier stages
• Industrial control systems

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision and manufacturer documentation to confirm exact electrical characteristics and mechanical dimensions. Ensure that the procurement channel provides authentic components from Microchip Technology or authorized distributors. Cross-reference the part number with official specifications to validate performance requirements for the intended application environment.

Single Bipolar Transistors Selection Notes

Select this component when a PNP power transistor with an 80 V rating and 5 A current capacity is required. Consider the TO-254 package for thermal management needs and through-hole mounting constraints. Evaluate the hFE requirements against the load conditions to ensure adequate drive capability. Confirm that the operating temperature range meets the system's environmental specifications.

Single Bipolar Transistors Part Context

This component belongs to the 2N7372 family of power transistors produced by Microchip Technology. The JANTX designation typically indicates a higher reliability or specific screening level variant compared to standard commercial grades. It serves as a robust solution for medium-power switching tasks where silicon BJT technology remains suitable.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source data. Verify compatibility with existing circuit designs before considering alternative manufacturers or generic equivalents.