Single Diodes JANTXV1N5615US product image

JANTXV1N5615US

$8.20
  • Description:DIODE STANDARD 200V 1A D5A
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk

SKU:ddfc8865c24b Category: Brand:

  
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JANTXV1N5615US is listed in the Single Diodes range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE STANDARD 200V 1A D5A. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for JANTXV1N5615US

  • Description:DIODE STANDARD 200V 1A D5A
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io):1A
  • Voltage - Forward (Vf) (Max) @ If:1.6 V @ 3 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):150 ns
  • Current - Reverse Leakage @ Vr:500 nA @ 600 V
  • Capacitance @ Vr, F:45pF @ 12V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:SQ-MELF, A
  • Supplier Device Package:D-5A
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Grade:Military
  • Qualification:MIL-PRF-19500/429

Single Diodes datasheet and documents for JANTXV1N5615US

JANTXV1N5615US

Single Diodes Overview

The JANTXV1N5615US is a hermetically sealed fast recovery rectifier diode manufactured by Microchip Technology. It features a single silicon junction with a maximum repetitive peak reverse voltage of 200 V and an average forward current rating of 1 A. The device utilizes the A-Package-2 surface-mount configuration, designed for high-reliability applications. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 25 A, a forward voltage drop of 1.6 V, and a reverse leakage current of 500 nA. The component exhibits a typical reverse recovery time of 150 ns and operates within a temperature range from -65 °C to +175 °C.

Single Diodes Feature Summary

  • Hermetically sealed glass encapsulation ensuring environmental protection and reliability in harsh conditions
  • Fast recovery performance optimized for high-frequency switching applications
  • Extended thermal capability supporting operation at elevated temperatures up to 175 °C

Single Diodes Applications

  • Military aerospace power supply circuits
  • High-reliability industrial rectification systems
  • Spacecraft electronic subsystems requiring radiation hardness

Single Diodes Procurement Notes

Verify the specific suffix US indicates the surface mount package variant distinct from through-hole equivalents. Confirm that the JANTXV grade meets the required military qualification standards for your project. Ensure compatibility with the A-Package-2 footprint during PCB layout. Request official datasheets to validate electrical parameters against design specifications before finalizing procurement orders.

Single Diodes Selection Notes

Select this component when hermetic sealing and extended temperature ranges are mandatory. Compare the 150 ns recovery time against circuit requirements to ensure adequate switching speed. Evaluate the 200 V reverse voltage rating to provide sufficient margin over operating voltages. Consider the surface mount form factor for automated assembly processes in constrained board spaces.

Single Diodes Part Context

This part belongs to the JAN series of high-reliability semiconductors produced by Microchip Technology. The JANTXV designation signifies a specific quality level within the military-grade product line. These components are engineered to withstand extreme environmental stresses encountered in defense and space applications. The series maintains strict manufacturing controls to ensure consistent performance across production batches.

Single Diodes Replacement Considerations

Direct substitutes include JAN1N5615US and JANS1N5615US, which share identical electrical specifications but may differ in qualification levels. Verify package compatibility and hermetic seal requirements when considering these alternatives.

JANTXV1N5615USJANTXV1N5615US
$8.20
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