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Product Detailed Parameters
- Description：TRANS 2NPN 60V 30MA TO-78-6
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：30mA
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 1mA, 5V
- Power - Max：350mW
- Frequency - Transition：-
- Operating Temperature：200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-78-6 Metal Can
- Supplier Device Package：TO-78-6
- Grade：Military
- Qualification：MIL-PRF-19500/355
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Overview
The Microchip Technology JANTXV2N2919 is a dual NPN small-signal bipolar junction transistor (BJT) array housed in a TO-78-6 metal can package. It features a maximum collector-emitter voltage of 60V and a continuous collector current of 30mA per element. The device has a total power dissipation rating of 350mW and supports a maximum junction temperature of 200°C. DC current gain is specified at a minimum of 150 when tested at 1mA collector current and 5V collector-emitter voltage. The saturation voltage is limited to 300mV under conditions of 100µA base current and 1mA collector current.
Feature Summary
- Dual NPN configuration within a single hermetically sealed metal can for space-constrained designs
- High junction temperature capability supporting operation up to 200°C
- Military-grade screening indicated by the JANTXV designation suffix
Applications
- Radiation-hardened aerospace circuits
- Military avionics signal processing
- High-reliability industrial control systems
Procurement Notes
Verify the specific revision level and lot traceability documentation upon receipt, as military-grade components often require strict adherence to quality standards. Confirm that the packaging integrity remains intact to preserve the hermetic seal essential for radiation hardness. Ensure compatibility with existing assembly processes regarding the TO-78-6 through-hole mounting style.
Selection Notes
Select this component when a dual NPN topology is required in a ruggedized environment. The TO-78-6 package offers superior thermal performance compared to plastic equivalents. Verify that the 30mA current limit meets the load requirements. Consider the 350mW power dissipation constraint when designing heat management strategies for dense circuit boards.
Part Context
This part belongs to the 2N2919 family of dual NPN transistors manufactured by Microchip Technology. It serves as a specialized variant designed for high-reliability applications where standard commercial parts would fail due to environmental stress or radiation exposure. The TO-78-6 package is a legacy form factor commonly used in defense and space electronics.
Replacement Considerations
JANTX2N2919
