JANTXV2N2919L

Overview

The JANTXV2N2919L/TR is a silicon NPN single bipolar junction transistor (BJT) manufactured by Microchip Technology. It utilizes through-hole mounting in a TO-78-6 package. The device supports a maximum DC collector current of 30 mA and a collector-emitter voltage (VCEO) of 60 V. Key electrical parameters include a collector-base voltage (VCBO) of 70 V, an emitter-base voltage (VEBO) of 6 V, and a power dissipation (Pd) of 350 mW. The component operates within a temperature range of -65 °C to +200 °C, with a minimum DC current gain (hFE) of 175 at 30 mA and 10 V.

Feature Summary

• High-temperature operation capability up to +200 °C
• Rad-hardened radiation tolerance for military environments
• Single NPN configuration in a hermetically sealed metal can

Applications

• Military aerospace circuits requiring radiation hardness
• High-temperature signal amplification
• Switching applications in extreme environments

Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to confirm exact binning or testing standards. Confirm that the TO-78-6 package matches your PCB layout requirements. Ensure procurement channels provide traceability certificates required for defense or aerospace projects. Check for RoHS exemptions if applicable to your manufacturing process.

Selection Notes

Select this component when high reliability and radiation tolerance are critical. Compare the 30 mA current limit and 350 mW power dissipation against circuit demands. Verify that the TO-78-6 package fits the mechanical constraints. Consider the wide operating temperature range for thermal management strategies in enclosed systems.

Part Context

This part belongs to the JANTXV series of radiation-hardened bipolar transistors produced by Microchip Technology. The series is designed for harsh environments where standard commercial components would fail due to ionizing radiation exposure. It serves as a robust alternative for legacy military designs requiring proven silicon performance.

Replacement Considerations

Direct substitutes may include other JANTXV2N2919 variants from Microchip. Cross-reference with equivalent radiation-hardened NPN transistors from other qualified manufacturers only if pinout and electrical specifications match exactly.