SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The JANTXV2N2919U is a dual small-signal NPN bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in a LCC-6 surface-mount package. The device supports a maximum collector-emitter voltage of 60 V and a collector-base voltage of 70 V, with an emitter-base voltage rating of 6 V. It handles a continuous collector current of 30 mA and dissipates up to 350 mW of power. The component operates within a temperature range of -65°C to +200°C and features a minimum DC current gain (hFE) of 175 at 10 µA.
Verify the specific ordering suffix and manufacturer lot traceability upon request. Confirm that the component meets all required environmental testing standards for the intended deployment. Ensure compatibility with the designated assembly processes and soldering profiles before finalizing procurement orders.
Select this component when a dual NPN topology is required in a surface-mount form factor. Consider the 350 mW power dissipation limit and the 60 V voltage ratings against circuit requirements. Evaluate the LCC-6 package dimensions against available board space constraints.
This part belongs to the 2N2919 series of dual small-signal transistors produced by Microchip Technology. It serves as a specialized variant designed for ruggedized applications, offering enhanced performance characteristics compared to standard commercial equivalents while maintaining pin compatibility with legacy through-hole designs.
Direct substitutes include the JAN2N2919U and JANTX2N2919U variants from the same manufacturer family. Verify electrical parameter tolerances and package integrity when cross-referencing with other vendors' equivalent dual NPN devices.