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Product Detailed Parameters
- Description：TRANS 2NPN 60V 30MA TO-78-6
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：30mA
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-78-6 Metal Can
- Supplier Device Package：TO-78-6
- Grade：Military
- Qualification：MIL-PRF-19500/355
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Overview
The JANTXV2N2920 is a dual NPN silicon small-signal transistor manufactured by Microchip Technology. It features a TO-78-6 cylindrical metal package with six terminals. The device operates within a collector-emitter voltage range of up to 60 V and supports a maximum continuous collector current of 30 mA. Power dissipation is rated at 350 mW. The component exhibits a minimum DC current gain (hFE) of 175 and a maximum of 600. It is qualified per MIL-PRF-19500/355 standards for Level 2 applications, ensuring reliability in demanding environments.
Feature Summary
- Dual configuration integrating two separate NPN elements within a single hermetically sealed metal package.
- Qualified to MIL-PRF-19500/355 specifications for enhanced radiation hardness and environmental stability.
- High DC current gain characteristics suitable for precise signal amplification tasks.
Applications
- Military aerospace electronic systems requiring radiation-hardened components
- High-reliability analog signal processing circuits
- Spacecraft telemetry and control subsystems
Procurement Notes
Verify the specific ordering suffix against official Microchip documentation to confirm exact qualification levels and testing parameters. Ensure compatibility with existing MIL-PRF-19500/355 requirements. Confirm package integrity and terminal plating specifications prior to integration into sensitive hardware designs.
Selection Notes
Select this component when dual NPN isolation is required in a compact metal package. Consider the 60 V collector-emitter rating and 30 mA current limit for circuit design constraints. Evaluate the high hFE range for amplifier biasing needs. Verify thermal management capabilities given the 350 mW power dissipation rating in enclosed assemblies.
Part Context
This part belongs to the 2N2920 family of dual NPN transistors produced under military specifications. It shares functional similarities with the 2N2919 but differs in polarity and specific electrical thresholds. The JANTXV suffix indicates a specific screening level within the broader MIL-PRF-19500/355 product line managed by Microchip.
Replacement Considerations
Direct substitutes include the 2N2920L and 2N2920U variants, provided they meet the same MIL-PRF-19500/355 qualification standards. Verify pinout compatibility and electrical parameter overlaps before substitution.
