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The JANTXV2N2920L is a dual NPN silicon small-signal transistor manufactured by Microchip Technology. It consists of two electrically isolated and matched transistors housed in a TO-78-6 metal can package. The device complies with MIL-PRF-19500/355 specifications for the JANTXV quality level, ensuring high reliability. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 60 V and a maximum collector current (IC) of 30 mA. The component supports a maximum junction temperature of +200°C and features a minimum DC current gain (hFE) of 300 at specified test conditions.
Verify the specific suffix against the manufacturer's datasheet to confirm compliance with the JANTXV quality level and radiation hardness guarantees defined in MIL-PRF-19500/355. Ensure that the procurement source provides valid traceability documentation for military-grade components. Confirm that the TO-78-6 package dimensions match the design requirements before integration into the final assembly.
Select this component when a dual NPN configuration with matched characteristics is required for high-reliability designs. The JANTXV level offers stricter screening than standard JAN levels. Consider the 60 V collector-emitter voltage limit and 30 mA current rating during circuit design. Verify that the application environment does not exceed the +200°C maximum junction temperature specification.
This part belongs to the 2N2920 family of dual NPN silicon transistors. Variants such as 2N2919, 2N2920, and their JANTX or JANS counterparts share similar structural designs but differ in quality assurance levels and radiation hardness guarantees. The JANTXV designation specifically indicates a higher reliability tier within the MIL-PRF-19500/355 specification framework.
Direct substitutes include other JANTXV-level dual NPN transistors compliant with MIL-PRF-19500/355, such as the JANTXV2N2919. Verify pinout compatibility and electrical parameter margins before substitution.