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JANTXV2N3421L is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 80V 3A TO-5AA. Review the specifications below when checking this part for your BOM.
The JANTXV2N3421L is a radiation-hardened NPN silicon power bipolar junction transistor manufactured by Microchip Technology. It is designed for medium-power switching applications and complies with MIL-PRF-19500/393K specifications. The device features a maximum collector-emitter voltage of 80 V, a maximum collector-base voltage of 125 V, and an emitter-base voltage of 8 V. It supports a continuous collector current of up to 5 A with a power dissipation rating of 1 W. The component operates within a temperature range of -65°C to +200°C and utilizes a TO-5 metal can package.
Verify the specific suffix L against official Microchip documentation to confirm lead frame or plating variations. Ensure procurement channels provide traceable certificates of conformance to MIL-PRF-19500/393K. Confirm that the JANTXV grade meets the required screening levels for the intended mission profile before finalizing orders.
Select this component when radiation hardness and high-temperature operation are critical requirements. The JANTXV grade offers enhanced screening compared to standard JAN levels. Consider the TO-5 through-hole package constraints during PCB layout. Verify that the 80 V collector-emitter voltage rating aligns with the circuit's peak operating conditions.
This part belongs to the 2N3421 family of radiation-hardened NPN power transistors. Variants include JAN, JANTX, JANTXV, JANS, JANHC, and JANKC grades, each offering different levels of quality assurance under MIL-PRF-19500. The JANTXV designation indicates a specific screening level within this military-grade series.
The maximum continuous collector current (IC) is 5 A.
Yes, it complies with MIL-PRF-19500/393K for radiation-hardened NPN silicon power transistors.
The device operates from -65°C to +200°C.
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