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JANTXV2N3499 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 100V 0.5A TO39. Review the specifications below when checking this part for your BOM.
The JANTXV2N3499 is a silicon NPN small-signal bipolar junction transistor manufactured by Microchip Technology. It features a TO-5-3 (TO-39) through-hole package and supports a maximum DC collector current of 500 mA with a power dissipation of 1 W. The device withstands a collector-emitter voltage of 100 V and a collector-base voltage of 100 V, while maintaining an emitter-base voltage rating of 6 V. It operates within a temperature range of -65°C to +200°C.
Verify the specific revision level and lot traceability documentation upon order confirmation. Ensure that the procurement channel provides valid military-grade certification papers. Confirm that the component meets all specified radiation hardness requirements for the intended operational environment before finalizing the purchase agreement.
Select this component when designing circuits requiring high reliability under extreme thermal conditions. The TO-5-3 package facilitates secure mounting in ruggedized enclosures. Verify that the circuit design accommodates the specific gain characteristics and saturation voltages defined in the official datasheet to ensure proper switching performance.
This part belongs to the JANTXV series of radiation-hardened semiconductors produced by Microchip Technology. The series targets applications where standard commercial components would fail due to ionizing radiation exposure or harsh environmental factors. It serves as a specialized alternative to general-purpose transistors in defense and space sectors.
JANTX2N3499
The maximum operating temperature is +200°C.
No, it utilizes a TO-5-3 through-hole metal can package.
The collector-emitter voltage (VCEO) is rated at 100 V.
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