Single Bipolar Transistors JANTXV2N3637UB/TR product image

JANTXV2N3637UB/TR

$19.62
  • Description:TRANS PNP 175V 1A UB
  • Series:-

SKU:667d0f7700ed Category: Brand:

  
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JANTXV2N3637UB/TR is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS PNP 175V 1A UB. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANTXV2N3637UB/TR

  • Description:TRANS PNP 175V 1A UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):175 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 50mA, 10V
  • Power - Max:1.5 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/357

Single Bipolar Transistors datasheet and documents for JANTXV2N3637UB/TR

JANTXV2N3637UB/TR

Single Bipolar Transistors Overview

The JANTXV2N3637UB/TR is a PNP silicon small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features an LCC-3 surface-mount package and supports single configuration operation. Key electrical ratings include a maximum collector-emitter voltage of 175 V, a maximum collector-base voltage of 175 V, and an emitter-base voltage of 5 V. The device handles a continuous DC collector current of 1 A with a power dissipation capacity of 1 W. It operates within a temperature range of -65°C to +200°C and provides a minimum DC current gain (hFE) of 55 at 100 µA/10 V.

Single Bipolar Transistors Feature Summary

  • Qualified for high-reliability environments under the JAN specification standard
  • Designed for surface-mount assembly using the LCC-3 ceramic package
  • Capable of operating at elevated temperatures up to 200°C

Single Bipolar Transistors Applications

  • Military aerospace electronic systems
  • High-reliability industrial control circuits
  • Aviation communication equipment

Single Bipolar Transistors Procurement Notes

Verify the complete part number including the JAN prefix and suffix against official Microchip documentation to ensure correct qualification level. Confirm that the LCC-3 package matches the design footprint. Validate that the component meets specific military reliability requirements before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 175 V breakdown voltage is required in a compact surface-mount form factor. Ensure the application circuit can accommodate the 1 W power dissipation limit. Verify compatibility with the LCC-3 soldering profile and thermal management constraints during the design phase.

Single Bipolar Transistors Part Context

This device belongs to the 2N3637 family of PNP silicon transistors produced by Microchip Technology. The JAN designation indicates compliance with strict military quality standards. The UB suffix specifies the surface-mount LCC-3 package variant, distinguishing it from through-hole TO-5 versions found in other series members.

Single Bipolar Transistors Replacement Considerations

Cross-reference with JAN2N3637UB or JAN2N3637L for pin-compatible alternatives. Verify that substitute parts maintain identical voltage ratings and package dimensions. Confirm that replacement components meet the same environmental and reliability qualifications.

JANTXV2N3637UB/TRJANTXV2N3637UB/TR
$19.62
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