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Product Detailed Parameters
- Description：TRANS 2PNP 60V 50MA TO-78-6
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：50mA
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 1mA, 5V
- Power - Max：350mW
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-78-6 Metal Can
- Supplier Device Package：TO-78-6
- Grade：Military
- Qualification：MIL-PRF-19500/336
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Overview
The JANTXV2N3810 is a dual PNP silicon small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a TO-78-6 metal can package designed for through-hole mounting. The device supports a maximum DC collector current of 50 mA and withstands collector-emitter and collector-base voltages of 60 V each, with an emitter-base voltage rating of 5 V. Power dissipation is rated at 350 mW. The component operates within a temperature range of -65°C to +200°C and complies with MIL-PRF-19500/336 military specifications.
Feature Summary
- Hermetically sealed metal can construction ensures reliability in harsh environments.
- Dual configuration integrates two PNP transistors into a single compact unit.
- Military-grade qualification meets stringent MIL-PRF-19500/336 standards.
Applications
- Radiation-hardened aerospace systems
- High-reliability military electronics
- Harsh environment signal processing
Procurement Notes
Verify the specific ordering suffix against the official datasheet to confirm exact electrical parameters and radiation hardness levels. Confirm compliance requirements such as MIL-PRF-19500/336 certification. Ensure the procurement channel provides traceable documentation for military-grade components. Check for RoHS exemptions if applicable to the specific manufacturing lot.
Selection Notes
Select this component when a hermetically sealed dual PNP transistor is required for high-temperature or radiation-exposed applications. Compare the 60 V breakdown voltage and 50 mA current limits against circuit demands. Consider the TO-78-6 package dimensions for board layout constraints. Verify thermal management needs given the 350 mW power dissipation limit.
Part Context
This part belongs to the 2N3810 series of dual PNP transistors produced by Microchip Technology. It serves as a radiation-hardened alternative to standard commercial variants. The component is distinct from single-transistor versions like the 2N3811. It shares the core electrical characteristics of the base 2N3810 model but includes enhanced packaging for durability.
Replacement Considerations
JANTXV2N3810U is a verified substitute offering identical electrical specifications and military qualification. Both parts utilize the TO-78-6 package and meet MIL-PRF-19500/336 standards. Verify pinout compatibility before substitution.
