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The JANTXV2N4957UB is a PNP silicon small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a single configuration in an SMD-3 surface-mount package. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 30 V, a collector-base voltage (VCBO) of 30 V, and an emitter-base voltage (VEBO) of 3 V. The device supports a continuous collector current of -30 mA with a power dissipation (Pd) of 200 mW. It operates within a temperature range of -65°C to +200°C. DC current gain (hFE) ranges from a minimum of 15 to a maximum of 165.
Verify the specific ordering suffix and revision level against the official Microchip datasheet before procurement. Ensure that the component meets the required radiation hardness specifications for the target application environment. Confirm package compatibility and thermal management requirements during the sourcing phase.
Select this component when a PNP small-signal BJT with high-temperature capability and radiation tolerance is required. Compare the 30 V rating and 200 mW dissipation against circuit demands. Consider the SMD-3 package constraints for PCB layout and thermal performance relative to through-hole alternatives.
This part belongs to the JANTXV series of radiation-hardened bipolar transistors produced by Microchip Technology. The series provides enhanced reliability for defense and space applications where standard commercial components would fail due to ionizing radiation exposure or extreme thermal conditions.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout and electrical parameters carefully if considering alternative manufacturers.