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The JANTXV2N5793A is a silicon NPN small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for through-hole mounting in bulk packaging. The device features a single transistor configuration with a maximum collector-emitter voltage of 60 V and a collector-base voltage of 60 V. The emitter-base voltage rating is 5 V. Maximum power dissipation is specified at 600 mW, with a continuous collector current of 600 mA. The component operates within a temperature range of -65°C to +175°C. It has a minimum DC current gain (hFE) of 40.
Verify the specific revision level and lot traceability documentation upon order confirmation. Ensure that the procurement channel provides valid military-grade certification papers. Confirm that the component matches the exact JANTXV2N5793A designation to avoid substitution errors. Request test reports if required for quality assurance protocols.
Select this component when radiation tolerance and high-temperature stability are critical requirements. Compare the 600 mA current limit and 600 mW power dissipation against circuit demands. Ensure the TO-78-6 package fits the mechanical constraints. Verify that the NPN polarity matches the design schematic requirements.
This part belongs to the Microchip / Microsemi JANTXV series of radiation-hardened semiconductors. It is specifically engineered for defense and space applications where standard commercial components would fail due to ionizing radiation exposure. The JANTXV suffix indicates a specific screening level beyond standard military grades.
Direct substitutes must match the JANTXV2N5793A specification exactly. Generic 2N5793A parts lack the necessary radiation hardening. Consult Microchip for qualified alternatives within their hardened portfolio.