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The JANTXV2N5794U is a dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features an NPN/PNP complementary pair configuration housed in a TO-18 metal can package. The device is designed for high-reliability applications, meeting MIL-PRF-19500/362 specifications. Key electrical parameters include a collector-emitter voltage of 50 V and a collector-base voltage of 75 V. The maximum DC collector current is rated at 800 mA with a power dissipation of 2 W. The operating temperature range extends from -55°C to +200°C, ensuring functionality in extreme environments.
Verify the specific suffix requirements against the official datasheet before ordering. Confirm that the procurement channel provides traceable documentation compliant with MIL-PRF-19500 standards. Ensure handling procedures account for the hermetic metal package integrity during installation.
Select this component when a matched complementary pair is required in a ruggedized environment. The TO-18 package suits through-hole mounting where space permits. Evaluate the 800 mA current rating against peak load requirements to ensure safe operation within the 2 W power dissipation limit.
This part belongs to the 2N5794 series of dual transistors produced under military quality standards. It serves as a radiation-tolerant alternative to commercial equivalents. The JANTXV designation indicates a specific screening level within the broader product family.
Direct replacements must match the TO-18 footprint and MIL-PRF-19500 qualification. Verify pinout compatibility between NPN and PNP terminals. Cross-reference with other JANTXV series parts only if electrical ratings are identical.