JANTXV2N6990

Overview

The JANTXV2N6990 is a silicon NPN small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a single configuration housed in a TO-39-3 through-hole package. The device supports a maximum DC collector current of 800 mA and operates with a collector-emitter voltage (VCEO) of 50 V. Key electrical limits include a collector-base voltage (VCBO) of 75 V, an emitter-base voltage (VEBO) of 6 V, and a power dissipation rating of 1 W. The component functions within a temperature range of -65°C to +200°C, with a minimum DC current gain (hFE) of 40 at 500 mA and 10 V.

Feature Summary

• Radiation-hardened design suitable for high-reliability environments
• Extended operating temperature range up to +200°C
• Single NPN configuration in a hermetically sealed metal can

Applications

• Military aerospace systems
• Satellite communication circuits
• High-reliability industrial control

Procurement Notes

Verify the specific revision level and lot traceability documentation upon order confirmation. Ensure that the procurement channel provides valid military or space-grade certification papers. Confirm that the part number suffix matches the required radiation hardness specifications. Request full material declarations and compliance statements prior to finalizing the purchase agreement.

Selection Notes

Select this component when a radiation-tolerant NPN transistor with a TO-39-3 metal case is required. Compare the 50 V collector-emitter voltage and 800 mA current limits against circuit demands. Verify that the 1 W power dissipation capability meets thermal management requirements. Ensure compatibility with existing board layouts designed for the TO-39-3 footprint.

Part Context

This part belongs to the JANTXV series of radiation-hardened semiconductors produced by Microchip Technology. The series targets applications requiring resilience against ionizing radiation effects. It serves as a specialized alternative to commercial grade transistors in harsh operational environments.

Replacement Considerations

Direct replacements must match the JANTXV radiation hardness level and TO-39-3 package. Verify equivalent electrical parameters such as VCEO, IC, and hFE. Consult official substitution lists for qualified alternatives.