RF Diode JDH2S02FSTPL3 product image

JDH2S02FSTPL3

$0.31
  • Description:RF DIODE SCHOTTKY 10V FSC
  • Series:-

SKU:cafed6ed78cd Category: Brand:

  
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JDH2S02FSTPL3 is listed in the RF Diode range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is RF DIODE SCHOTTKY 10V FSC. Review the specifications below when checking this part for your BOM.

RF Diode specifications for JDH2S02FSTPL3

  • Description:RF DIODE SCHOTTKY 10V FSC
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):10V
  • Current - Max:10 mA
  • Capacitance @ Vr, F:0.3pF @ 0.2V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):-
  • Operating Temperature:125°C (TJ)
  • Package / Case:2-SMD, Flat Leads
  • Supplier Device Package:fSC
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for JDH2S02FSTPL3

JDH2S02FSTPL3

RF Diode Overview

The JDH2S02FSTPL3 is a single Schottky RF diode manufactured by Toshiba Semiconductor and Storage. It features a maximum reverse voltage rating of 10V and a maximum forward current of 10mA. The device utilizes a 2-SMD, Flat Lead package configuration suitable for surface mount applications. Key electrical characteristics include a junction temperature rating of 125°C and a capacitance of 0.3pF measured at 0.2V and 1MHz. This component is designed for high-frequency radio frequency signal processing tasks within electronic circuits.

RF Diode Feature Summary

  • Single Schottky barrier rectifier structure optimized for RF applications
  • Low capacitance design supporting high-frequency signal integrity
  • Surface mount flat lead package for automated assembly integration

RF Diode Applications

  • RF signal detection and mixing circuits
  • High-frequency switching applications
  • Microwave receiver front-end protection

RF Diode Procurement Notes

Verify the specific ordering suffix TPL3 against the manufacturer's official datasheet to ensure correct tape and reel packaging specifications. Confirm that the component status aligns with project requirements, as availability may vary. Cross-reference the pinout and thermal characteristics with the intended PCB layout to guarantee proper thermal dissipation and electrical connection reliability during implementation.

RF Diode Selection Notes

Select this component when a low-capacitance Schottky diode is required for RF frequencies up to microwave ranges. The 10V reverse voltage rating suits low-voltage signal paths. Ensure the 2-SMD flat lead package fits the available footprint. Consider the 10mA current limit for small-signal applications rather than power handling. Validate the 125°C junction temperature capability against the operating environment constraints.

RF Diode Part Context

This part belongs to the JDH2S02FS series of RF Schottky diodes from Toshiba Semiconductor and Storage. The series is characterized by fast switching speeds and low forward voltage drops typical of Schottky technology. The FSC designation indicates the specific package variant. These diodes are generally used in communication systems requiring efficient signal rectification or mixing at high frequencies.

RF Diode Replacement Considerations

Consult official cross-reference lists for direct substitutes. Verify that any alternative maintains the 10V reverse voltage, 10mA current, and 0.3pF capacitance specifications. Ensure the replacement package matches the 2-SMD flat lead form factor to avoid PCB redesign.

JDH2S02FSTPL3JDH2S02FSTPL3
$0.31
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