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Product Detailed Parameters
- Description：PROTOTYPE
- Series：-
- Mfr：Texas Instruments
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：24 mA @ 10 V
- Current Drain (Id) - Max：50 mA
- Voltage - Cutoff (VGS off) @ Id：1.5 V @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds：24pF @ 5V
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-74A, SOT-753
- Supplier Device Package：SOT-23-5
- Grade：-
- Qualification：-
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Overview
The JFE150DBVT is an N-channel JFET in a 5-pin SOT-23 package. It features ultra-low voltage noise of 0.8 nV/√Hz at 1 kHz with 5 mA drain current and 1.8 fA/√Hz current noise. The device offers high transconductance of 68 mS, low input capacitance of 24 pF, and maximum gate current of 10 pA. It withstands ±40 V breakdown voltages for gate-to-source/drain and drain-to-source terminals. Operating junction temperature ranges from -40°C to +125°C.
Feature Summary
- Ultra-low noise performance with integrated input protection diodes for surge clamping
- Extremely low gate current ensuring minimal shot noise contribution
- High transconductance and high input impedance exceeding 1 TΩ
- Robust voltage handling capabilities with ±40 V breakdown ratings
Applications
- Microphone inputs
- Hydrophones and marine equipment
- Professional audio mixers and control surfaces
- Guitar amplifiers and music instrument amplifiers
- Condition monitoring sensors
Procurement Notes
Verify the specific DBVT suffix corresponds to the 5-pin SOT-23 package configuration. Confirm RoHS compliance status and lead times directly with Texas Instruments or authorized distributors. Ensure design implementation accounts for the specified thermal resistance values and absolute maximum ratings to maintain device reliability during operation.
Selection Notes
Select this component for applications requiring the lowest possible noise-to-power efficiency. The user-settable quiescent current allows optimization between power consumption and noise performance across a wide range. Consider the integrated clamp nodes if external protection components are undesirable due to leakage or non-linear capacitance concerns.
Part Context
This discrete JFET utilizes Texas Instruments' modern analog bipolar process technology. It provides superior noise characteristics compared to older discrete JFET technologies. The device is designed to offer flexibility in biasing while maintaining excellent noise performance for currents ranging from 50 μA to 20 mA.
Replacement Considerations
No public confirmed substitute part numbers are available in the documentation.
FAQ
How does the JFE150 handle overvoltage events on the input?
The device features integrated diodes connected to separate clamp nodes (VCH and VCL) that steer current from the gate during surges or ESD events, eliminating the need for external protection devices.
What determines the noise performance of the JFE150?
Noise performance depends on the drain-to-source bias current. Increasing the bias current increases transconductance, which decreases input-referred thermal noise, allowing designers to trade off current consumption for lower noise.
Can the JFE150 be used in standard three-pin sockets?
Yes, by shorting pin 2 (VCL) to pin 3 (Gate), the device can fit into a three-pin socket, though this disables the negative clamp diode protection and slightly increases input capacitance.
