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Product Detailed Parameters
- Description：JFET N-CH 40V 50MA SC70-5
- Series：-
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：24 mA @ 10 V
- Current Drain (Id) - Max：50 mA
- Voltage - Cutoff (VGS off) @ Id：1.5 V @ 0.1 µA
- Input Capacitance (Ciss) (Max) @ Vds：24pF @ 5V
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-40°C ~ 125°C (TA)
- Mounting Type：Surface Mount
- Package / Case：5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package：SC-70-5
- Grade：-
- Qualification：-
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Overview
The JFE150DCKR is an N-channel junction-gate field-effect transistor (JFET) manufactured by Texas Instruments in a five-pin SC70 package. It features ultra-low noise performance, including voltage noise of 0.8 nV/√Hz at 1 kHz with a drain current of 5 mA and 0.9 nV/√Hz at 2 mA. The device exhibits low gate current with a maximum of 10 pA and high transconductance up to 68 mS. Electrical ratings include a drain-to-source breakdown voltage of 40 V and gate-to-source breakdown voltage of -40 V. Operating temperature ranges from -40°C to +125°C.
Feature Summary
- Ultra-low noise performance optimized for audio and sensor applications
- Integrated input protection diodes connected to separate clamp nodes
- High transconductance combined with extremely low gate current
- Flexible biasing capability across a wide quiescent current range
Applications
- Microphone inputs
- Hydrophones and marine equipment
- DJ controllers, mixers, and other DJ equipment
- Professional audio mixer or control surface
- Guitar amplifier and other music instrument amplifier
Procurement Notes
Verify the specific ordering suffix DCKR corresponds to the SC70-5 package configuration before procurement. Confirm that the component meets RoHS compliance requirements for your target market. Ensure the supplier provides valid traceability documentation. Validate that the received parts match the manufacturer's marking code and date code specifications. Check for any specific handling instructions regarding electrostatic discharge during storage and assembly.
Selection Notes
Select this component when designing front-end stages for high-impedance sensors requiring minimal signal degradation. The integrated clamp diodes simplify circuit design by eliminating the need for external protection components that could introduce leakage or distortion. Consider the trade-off between bias current and noise performance, as lower currents increase voltage noise density while higher currents improve transconductance. Evaluate thermal constraints within the small SC70 footprint for high-density layouts.
Part Context
This device belongs to the JFE150 family of discrete JFETs built using Texas Instruments' high-performance analog bipolar process. Unlike older technologies, it offers superior noise-to-power efficiency and tighter parameter control. The family includes variants in different packages, such as SOT-23, to accommodate various board space requirements while maintaining consistent electrical characteristics for precision analog applications.
Replacement Considerations
Direct replacements must maintain the SC70-5 package and matching electrical parameters. Verify compatibility with existing PCB footprints if substituting with other SC70 variants. Ensure the alternative device supports the required -40 V gate-to-source breakdown voltage and similar noise specifications for critical audio or sensor interfaces.
