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The KBJ2502G is a single-phase glass-passivated silicon bridge rectifier from the KBJ series by GeneSiC Semiconductor. It features a maximum average forward rectified current (IO) of 25 A at Ta = 25 °C and a repetitive peak reverse voltage (VRRM) of 200 V. The RMS reverse voltage is 140 V, with a DC blocking voltage of 200 V. Maximum instantaneous forward voltage per leg is 1.05 V at IF = 12.5 A. Peak forward surge current (IFSM) reaches 350 A for an 8.3 ms half-sine wave. Maximum reverse current is 10 µA at rated DC blocking voltage per leg. Operating temperature range is -55 °C to 125 °C.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm datasheet version matches production batch requirements. Ensure storage conditions remain within specified temperature limits to maintain performance integrity.
Select based on required reverse voltage ratings and thermal management capabilities. Derate current by 20% for capacitive loads. Verify package dimensions fit PCB layout constraints. Consider ambient temperature effects on forward current capacity.
Part of the KBJ25005G thru KBJ2504G series offering voltages from 50 V to 400 V. Utilizes molded plastic technique for reliable, low-cost construction. Standard polarity applies unless specified otherwise.
Compatible substitutes include KBJ2501G and KBJ2504G within the same series. Verify voltage ratings match application requirements before substitution.
Maximum reverse current is 10 µA at rated DC blocking voltage per leg.
Derate current by 20% when used with capacitive loads.
Plastic material has Underwriters Laboratory Flammability Classification 94V-0.