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The KBP08G is a single-phase standard recovery bridge rectifier manufactured by Diodes Incorporated. It provides an average rectified output current of 1.5 A at a case temperature of +105°C and supports a maximum repetitive peak reverse voltage of 800 V. The device features a forward voltage of 1.1 V maximum at the rated current and a non-repetitive peak forward surge current rating of 40 A for an 8.3 ms half-sine wave. Operating temperatures range from -55°C to +150°C, with leakage currents specified at 5 µA at +25°C and 500 µA at +125°C.
Verify the ordering suffix 'G' confirms lead-free and RoHS compliant status as defined by Diodes Incorporated. Confirm the package type is KBP and the packing quantity matches the standard tube configuration of 35 pieces. Ensure the component date code aligns with current inventory requirements before finalizing procurement orders.
Select the KBP08G when an 800 V peak reverse voltage rating is required for single-phase bridge rectification. Ensure the application operates within the 1.5 A average current limit at +105°C case temperature. Verify that the 40 A surge current capability is sufficient for the specific circuit startup or fault conditions encountered.
The KBP08G belongs to the KBP005G through KBP10G series of 1.5 A standard recovery bridge rectifiers. This family shares identical mechanical dimensions, thermal characteristics, and general electrical performance profiles, differing primarily in their maximum repetitive peak reverse voltage ratings ranging from 50 V to 1000 V.
Cross-reference with other manufacturers offering KBP package bridge rectifiers rated at 1.5 A and 800 V. Verify pinout compatibility and thermal resistance values to ensure equivalent performance in existing designs without modifying the printed circuit board layout.
The maximum non-repetitive peak forward surge current is 40 A for an 8.3 ms single half-sine wave superimposed on the rated load.
Standard KBP08G parts are not automatically qualified for automotive use. For AEC-Q100/101/104/200 qualification and IATF 16949 manufacturing, direct contact with Diodes Incorporated is required.
The typical thermal resistance from junction to case is 18 °C/W per element, measured with the device mounted on a 75mm x 75mm x 1.6mm copper plate heatsink.