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The KBP206G C2 is a single-phase silicon bridge rectifier manufactured by Taiwan Semiconductor. It features a maximum repetitive peak reverse voltage of 600 V and a maximum average forward rectified current of 2 A. The device exhibits a maximum instantaneous forward voltage of 1.2 V at 2 A and a maximum DC reverse current of 500 µA at 125°C. It supports a peak forward surge current of 60 A for an 8.3 ms half-sine wave. Operating junction temperature ranges from -55°C to +150°C, with a storage temperature range of the same span. The component utilizes a KBP through-hole package.
Verify the specific ordering suffix C2 corresponds to the tube packing configuration as defined in the manufacturer's documentation. Confirm that the halogen-free status aligns with project requirements based on the G compound designation. Ensure compatibility with standard through-hole assembly processes given the matte tin lead finish specifications.
Select this component when a 600 V blocking capability and 2 A continuous current rating are required for PCB mounting applications. Consider the thermal resistance characteristics for heat dissipation planning within the operating temperature limits. Verify that the surge current capacity meets the transient load requirements of the target circuit design.
This part belongs to the KBP20xG series of glass passivated bridge rectifiers produced by Taiwan Semiconductor. The series encompasses voltage ratings from 50 V to 1000 V, sharing common mechanical dimensions and electrical performance profiles. The KBP package provides a standardized footprint for through-hole integration in various power conversion modules.
Cross-reference with other manufacturers offering KBP206 equivalents ensuring identical 600 V / 2 A ratings and KBP package compatibility. Verify pinout polarity markings match the original design layout. Confirm thermal and electrical parameters meet or exceed the specified limits for the intended application environment.