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The GeneSiC Semiconductor KBPC2508W is a single-phase silicon bridge rectifier rated for a maximum average forward rectified current of 25 A at a case temperature of 55 °C. It features a repetitive peak reverse voltage of 800 V and a DC blocking voltage of 800 V. The device supports a peak forward surge current of 350 A under half-sine-wave conditions. Electrical characteristics include a maximum instantaneous forward voltage of 1.1 V per leg and a typical junction capacitance of 300 pF. Thermal resistance from junction to case is 1.9 °C/W. The component operates within a temperature range of -55 °C to +150 °C.
Verify the manufacturer designation, as some distributor listings associate this part number with Navitas Semiconductor or GeneSiC Semiconductor. Confirm the specific package variant (KBPC-W) matches the mechanical requirements. Ensure the datasheet version aligns with the required electrical tolerances for the 800 V rating before finalizing procurement orders.
Select the KBPC2508W when an 800 V reverse voltage rating and 25 A continuous current capacity are required. Consider the 1.9 °C/W thermal resistance for heatsink calculations. Derate the forward current by 20% if the load is capacitive rather than resistive or inductive. Verify that the through-hole mounting style fits the PCB layout constraints.
This component belongs to the KBPC2506T/W through KBPC2510T/W series of single-phase bridge rectifiers. The series covers voltage ratings from 600 V to 1000 V while maintaining a consistent 25 A current capability. The KBPC2508W specifically addresses the 800 V segment of this lineup.
The KBPC2508T is the through-hole variant within the same series sharing identical electrical specifications. Other models in the KBPC2506T/W to KBPC2510T/W family offer different voltage ratings but maintain the same current and package form factor.