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The GeneSiC Semiconductor KBPC2510W is a single-phase silicon bridge rectifier featuring the KBPC-W package. It provides a maximum average forward rectified current of 25 A at a case temperature of 55 °C and supports a repetitive peak reverse voltage of 1000 V. The device withstands a peak forward surge current of 350 A under half-sine-wave conditions. Electrical characteristics include a maximum instantaneous forward voltage of 1.1 V per leg and a typical junction capacitance of 300 pF. Thermal resistance from junction to case is rated at 1.9 °C/W, with an operating temperature range spanning -55 °C to +150 °C.
Verify the specific manufacturer designation on the component marking, as sources indicate GeneSiC branding alongside Navitas Semiconductor listings. Confirm the KBPC-W package variant matches the required mounting hole configuration for #10 screws. Ensure the datasheet revision aligns with the 1000 V rating, as documentation may reference broader series specifications.
Select this component when a 1000 V blocking capability is required for single-phase applications. The 25 A continuous current rating suits moderate power levels. Verify thermal management requirements against the 1.9 °C/W junction-to-case resistance. Consider derating the current by 20% if the load is capacitive rather than resistive or inductive.
This part belongs to the KBPC2506T/W through KBPC2510T/W series, differentiated primarily by their voltage ratings. While the KBPC-T package uses solder pins, the KBPC-W variant utilizes screw terminals for mounting. This series represents standard silicon bridge rectifiers designed for general industrial use.
Cross-reference with Vishay VS-GBPC2510W or Taiwan Semiconductor GBPC2510 for similar electrical ratings. Note that these alternatives utilize the GBPC-W package, which differs physically from the KBPC-W footprint. Verify terminal configurations before substitution.