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The onsemi KBU8M is a single-phase silicon bridge rectifier rated for a maximum repetitive reverse voltage of 1000 V. It supports an average rectified forward current of 8.0 A at 50°C ambient temperature and withstands a non-repetitive peak forward surge current of 300 A. The device features a low forward voltage drop of 1.0 V per bridge at 8.0 A and exhibits a total reverse leakage current of 10 µA at 25°C. Operating junction temperatures range from -55°C to +150°C, with power dissipation capabilities of 6.9 W.
Verify the manufacturer origin carefully, as Fairchild Semiconductor was acquired by onsemi. Ensure the component matches the specific datasheet revision C1 specifications. Confirm that the package type corresponds to the KBU form factor. Check for any lead-free or RoHS compliance markings if required by your assembly process. Validate authenticity through authorized distribution channels to avoid counterfeit parts.
Select the KBU8M when a 1000 V reverse voltage rating is necessary for the application. Ensure the design accommodates the 8.0 A continuous current limit at elevated temperatures. Consider the thermal resistance values for proper heat sinking or PCB copper pad sizing. Compare against lower voltage variants like KBU8J or KBU8K if system requirements allow for reduced voltage ratings.
This component belongs to the KBU8A through KBU8M series of bridge rectifiers manufactured by Fairchild Semiconductor, now part of onsemi. The series offers various voltage ratings from 50 V to 1000 V within the same physical KBU package footprint. This standardization allows for easy voltage upgrades in existing designs without altering the mechanical layout.
Compatible substitutes include Vishay KBU8M-E4/51 and Micro Commercial Components KBU8M-BP. These alternatives share identical electrical ratings and the KBU package outline. Verify pinout compatibility and thermal characteristics before implementation.
The maximum operating junction temperature (TJ) for the KBU8M is +150°C.
The total bridge reverse leakage current increases from 10 µA at 25°C to 500 µA at 100°C.
The thermal resistance from junction to ambient (RθJA) is 18 °C/W per leg when mounted on a PCB with specified copper pads.