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The KN4A4M(0)-T1-A is a PNP silicon transistor with built-in resistors, manufactured by Renesas Electronics Corporation. It operates within a collector-to-emitter voltage range of -50 V and supports a continuous DC collector current of -0.1 A. The device features an integrated base resistor (R1) of 10 kΩ and an emitter-to-base resistor (R2) of 10 kΩ. It utilizes the SC-75 (USM) package and maintains a junction temperature rating up to 150 °C.
Verify component authenticity through authorized Renesas distributors or sales offices. Confirm that the specific ordering suffix matches the required package variant and quality grade. Ensure compliance with export control regulations before international transactions. Review the latest datasheet revisions for any updates to absolute maximum ratings prior to final procurement decisions.
Select this component when a compact PNP transistor with pre-integrated biasing resistors is required. Verify that the 10 kΩ internal resistance values align with the target logic levels and drive currents. Ensure the SC-75 package dimensions fit the available PCB footprint. Check thermal dissipation requirements against the 0.2 W total power limit under expected ambient conditions.
This part belongs to the KN4xxx family of resistor-built-in PNP transistors. It serves as the complementary counterpart to the KA4xxx NPN series. The product line was originally developed by NEC Electronics Corporation before the company merged with Renesas Technology Corporation in April 2010. Documentation may still reference the legacy NEC branding.
Both the base resistor (R1) and the emitter-to-base resistor (R2) have a nominal value of 10.0 kΩ.
The maximum continuous DC collector current is -0.1 A, while the pulsed collector current can reach -0.2 A under specific duty cycle constraints.
Yes, the KN4xxx series is designed to be complementary to the KA4xxx series, allowing for matched performance in push-pull or differential configurations.