KSA708CYBU

Description：TRANS PNP 60V 0.7A TO-92-3
Series：-

SKU:794ec5469bb3 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

KSA708CYBU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 60V 0.7A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for KSA708CYBU

Description：TRANS PNP 60V 0.7A TO-92-3
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：700 mA
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 50mA, 2V
Power - Max：800 mW
Frequency - Transition：50MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3

Single Bipolar Transistors datasheet and documents for KSA708CYBU

KSA708CYBU

Single Bipolar Transistors Overview

The KSA708CYBU is a PNP epitaxial silicon bipolar junction transistor manufactured by onsemi. It features a TO-92-3 through-hole package with a maximum collector current of 700 mA and a collector-emitter voltage rating of 60 V. The device supports a collector-base voltage of 80 V and an emitter-base voltage of 8 V. Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 240, a transition frequency of 50 MHz, and a power dissipation capacity of 800 mW. It operates within a temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

PNP epitaxial silicon construction for reliable switching performance
High collector current capability up to 700 mA
Wide operating temperature range extending to +150°C
Through-hole TO-92-3 packaging for standard board mounting

Single Bipolar Transistors Applications

General-purpose switching circuits
Amplifier stages requiring PNP configuration
Power supply control applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to ensure correct variant identification. Confirm RoHS compliance status via manufacturer datasheets prior to integration. Note that availability may be limited as some distributors indicate discontinuation or restricted sales regions. Validate package dimensions and pinout compatibility with existing PCB footprints during the design phase.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a robust PNP transistor with moderate current handling in a standard through-hole format. Ensure the application voltage does not exceed the 60 V collector-emitter limit. Consider the thermal management requirements given the 800 mW power dissipation rating. Verify that the required current gain falls within the specified 40 to 240 range for the intended operating conditions.

Single Bipolar Transistors Part Context

This part belongs to the family of small-signal bipolar junction transistors produced by onsemi. It utilizes silicon epitaxial technology to achieve stable performance across varying temperatures. The TO-92-3 package is a common industry standard for low-power discrete semiconductors, facilitating easy insertion into automated or manual assembly processes.