KSD1691GSTU

Single Bipolar Transistors Overview

The KSD1691GSTU is an NPN epitaxial silicon transistor manufactured by onsemi, housed in a TO-126-3LD (CASE 340AS) package. It supports a maximum collector current of 5 A and a peak pulse current of 8 A. The device withstands collector-emitter and collector-base voltages of 60 V each, with an emitter-base voltage rating of 7 V. Power dissipation reaches 1.3 W at 25°C ambient temperature and 20 W at 25°C case temperature. The junction temperature limit is 150°C. DC current gain ranges from 100 to 400 depending on the hFE classification grade.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching
• High power dissipation capability up to 20 W at case temperature
• Large continuous collector current handling up to 5 A

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Power amplification stages
• Complementary applications paired with KSB1151 PNP transistors

Single Bipolar Transistors Procurement Notes

Verify component status before procurement as the datasheet revision history indicates that the KSD1691GSTU ordering part number has been marked as discontinued and rebranded. Confirm availability directly with onsemi representatives or authorized distributors. Ensure the specific hFE grade suffix matches design requirements, as gain characteristics vary significantly between O, Y, and G classifications.

Single Bipolar Transistors Selection Notes

Select this component when high current switching and low saturation voltage are required in a through-hole TO-126 package. Consider the thermal management capabilities, as power dissipation drops significantly as case temperature rises above 25°C. Verify the necessary hFE gain range for the specific application, choosing between the O, Y, or G grades based on base drive requirements.

Single Bipolar Transistors Part Context

This device belongs to the KSD1691 series of NPN epitaxial silicon transistors. It is designed as the complementary counterpart to the KSB1151 PNP transistor, allowing for matched push-pull configurations. The product utilizes standard TO-126-3LD mechanical outlines suitable for general electronic equipment requiring robust bipolar junction transistor performance.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly marks the KSD1691GSTU ordering part number as discontinued. Consult onsemi sales representatives for current availability or alternative recommendations. No direct substitute part numbers are listed in the provided documentation.

Single Bipolar Transistors FAQ

What is the maximum collector current for the KSD1691GSTU?

The maximum DC collector current is 5 A, while the peak pulse collector current can reach 8 A under specified conditions.

How does the hFE classification affect the device?

The 'G' suffix indicates an hFE2 classification range of 200 to 400. Other available grades include 'O' (100-200) and 'Y' (160-320).

Is this device compatible with the KSB1151?

Yes, the datasheet specifies that the KSD1691 series is complementary to the KSB1151 PNP transistor.