KSD2012YYDTU

Single Bipolar Transistors Overview

The KSD2012YYDTU is an NPN epitaxial silicon transistor designed for low-frequency power amplifier applications. It features a collector-emitter voltage of 60 V and a continuous collector current rating of 3 A. The device supports a maximum collector power dissipation of 25 W at 25°C case temperature. It utilizes a TO-220 Fullpack package with three leads. The component is classified as Pb-Free and operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

• Complementary design available with the KSB1366 PNP transistor
• Optimized for low-frequency power amplifier circuits
• High current handling capability suitable for robust power switching

Single Bipolar Transistors Applications

• Low frequency power amplification stages
• General purpose power switching applications
• Driver circuits requiring high collector current

Single Bipolar Transistors Procurement Notes

Verify the specific hFE grade suffix 'Y' against the ordering information table, as it denotes a DC current gain range of 100 to 200. Confirm that the TO-220 Fullpack package matches the mechanical outline CASE 221AT. Ensure the application environment respects the absolute maximum ratings, particularly the 25 W power dissipation limit at a 25°C case temperature.

Single Bipolar Transistors Selection Notes

Select this component when a high-current NPN transistor with a 60 V breakdown voltage is required for power amplification. Consider the complementary KSB1366 if a matched pair configuration is necessary for push-pull topologies. Evaluate the thermal management requirements carefully, as the 25 W rating depends on maintaining the specified case temperature.

Single Bipolar Transistors Part Context

This part belongs to the KSD series of NPN power transistors manufactured by onsemi. It is specifically engineered for audio and general-purpose power amplifier applications where high current drive is essential. The device is housed in a rugged TO-220 Fullpack package designed for efficient heat dissipation through the collector tab.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the KSB1366 as the complementary PNP device. No other direct substitute part numbers are documented in the provided source material.