Single Bipolar Transistors KSD288Y product image

KSD288Y

  • Description:TRANS NPN 55V 3A TO-220-3
  • Series:-

SKU:bd50a182498b Category: Brand:

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KSD288Y is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 55V 3A TO-220-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for KSD288Y

  • Description:TRANS NPN 55V 3A TO-220-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):55 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 100mA, 1A
  • Current - Collector Cutoff (Max):50µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 500mA, 5V
  • Power - Max:25 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3

Single Bipolar Transistors datasheet and documents for KSD288Y

KSD288Y

Single Bipolar Transistors Overview

The KSD288 is an NPN epitaxial silicon transistor manufactured by onsemi, formerly Fairchild Semiconductor. It features a collector-base voltage of 80 V and a collector-emitter voltage of 55 V. The device supports a continuous collector current of 3 A with a power dissipation rating of 25 W at 25°C case temperature. It utilizes a TO-220 package for through-hole mounting. DC current gain ranges from 40 to 240 depending on the classification code. The maximum junction temperature is 150°C.

Single Bipolar Transistors Feature Summary

  • High power handling capability with 25 W dissipation rating
  • Suitable for low frequency high power amplifier applications
  • Robust construction in a standard TO-220 through-hole package

Single Bipolar Transistors Applications

  • Power regulator circuits
  • Low frequency high power amplifiers

Single Bipolar Transistors Procurement Notes

Verify component authenticity as this part was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific ordering suffix matches the required hFE classification (R, O, or Y) for your design's gain requirements. Ensure the supplier provides traceability documentation given the historical nature of the product line.

Single Bipolar Transistors Selection Notes

Select the appropriate hFE classification based on circuit gain requirements: R for 40-80, O for 70-140, or Y for 120-240. Consider thermal management strategies since the 25 W rating requires a heatsink at elevated case temperatures. Verify that the 55 V collector-emitter voltage meets the peak operating voltage of the target application.

Single Bipolar Transistors Part Context

This component belongs to the KSD series of NPN power transistors designed for general-purpose switching and amplification tasks. The series offers various voltage and current ratings within the same TO-220 form factor to simplify inventory management for power supply designs.

Single Bipolar Transistors Replacement Considerations

KSD288Y

Single Bipolar Transistors FAQ

What are the available hFE classifications for the KSD288?

The KSD288 is available in three hFE classifications: R (40-80), O (70-140), and Y (120-240).

What is the maximum collector-emitter voltage for this transistor?

The maximum collector-emitter voltage (VCEO) is 55 V.

KSD288YKSD288Y

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