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The KSK30YBU is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It utilizes silicon technology and is housed in a TO-92-3 through-hole package. Key electrical specifications include a maximum drain-source voltage of 50 V, a power dissipation rating of 100 mW, and a typical drain current of 300 µA at 10 V. The device features a maximum input capacitance of 8.2 pF at 0 V and a gate cutoff voltage of 400 mV at 100 nA. It supports a maximum junction temperature of 125°C.
Verify component authenticity due to end-of-life status. Confirm RoHS compliance details via official datasheet. Check for alternative sourcing channels as manufacturer discontinuation may affect long-term availability. Validate package type matches design requirements before integration.
Select this component for low-power analog applications requiring high input impedance. Ensure circuit voltage does not exceed the 50 V breakdown limit. Consider thermal management within the 100 mW dissipation constraint. Verify compatibility with existing TO-92-3 footprints in the design.
This part belongs to the KSK30 series of N-channel JFETs from onsemi. It shares family characteristics with other devices in the lineup but is distinct in its specific voltage and current ratings. The TO-92-3 form factor aligns with common discrete transistor standards used in consumer and industrial electronics.
Public confirmed substitute part numbers are not available in the provided documentation. Due to the End-of-Life status, direct pin-to-pin replacements should be verified against updated manufacturer catalogs or equivalent generic JFET specifications.