KSK30YBU

KSK30YBU

$0.05
  • Description:JFET N-CH 50V TO92-3
  • Series:-

SKU:d871d93bc52e Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:JFET N-CH 50V TO92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):50 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):1.2 mA @ 10 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:400 mV @ 100 nA
  • Input Capacitance (Ciss) (Max) @ Vds:8.2pF @ 0V
  • Resistance - RDS(On):-
  • Power - Max:100 mW
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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KSK30YBU

Overview

The KSK30YBU is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It utilizes silicon technology and is housed in a TO-92-3 through-hole package. Key electrical specifications include a maximum drain-source voltage of 50 V, a power dissipation rating of 100 mW, and a typical drain current of 300 µA at 10 V. The device features a maximum input capacitance of 8.2 pF at 0 V and a gate cutoff voltage of 400 mV at 100 nA. It supports a maximum junction temperature of 125°C.

Feature Summary

  • N-channel JFET configuration for signal processing applications
  • Through-hole TO-92-3 packaging for standard board mounting
  • Low input capacitance suitable for high-impedance circuits

Applications

  • High-impedance amplifier stages
  • Analog switching circuits
  • Voltage-controlled resistor applications

Procurement Notes

Verify component authenticity due to end-of-life status. Confirm RoHS compliance details via official datasheet. Check for alternative sourcing channels as manufacturer discontinuation may affect long-term availability. Validate package type matches design requirements before integration.

Selection Notes

Select this component for low-power analog applications requiring high input impedance. Ensure circuit voltage does not exceed the 50 V breakdown limit. Consider thermal management within the 100 mW dissipation constraint. Verify compatibility with existing TO-92-3 footprints in the design.

Part Context

This part belongs to the KSK30 series of N-channel JFETs from onsemi. It shares family characteristics with other devices in the lineup but is distinct in its specific voltage and current ratings. The TO-92-3 form factor aligns with common discrete transistor standards used in consumer and industrial electronics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the End-of-Life status, direct pin-to-pin replacements should be verified against updated manufacturer catalogs or equivalent generic JFET specifications.

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