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The KSP10TA is an NPN epitaxial silicon transistor manufactured by Fairchild Semiconductor, belonging to the KSP10 series. It is housed in a TO-92-3 package with kinked leads for through-hole mounting. The device features a collector-emitter breakdown voltage (VCEO) of 25 V and a collector-base breakdown voltage (VCBO) of 30 V. The emitter-base breakdown voltage (VEBO) is rated at 3 V. Maximum power dissipation (Pd) is 350 mW. The transition frequency (fT) is 650 MHz, and the minimum DC current gain (hFE) is 60. The maximum operating temperature reaches +150°C.
Verify the manufacturer origin carefully, as the KSP10 series is produced by multiple vendors including onsemi and Fairchild. Confirm the specific datasheet revision and electrical tolerances match the design requirements. Ensure the TO-92-3 kinked lead form factor is compatible with the target PCB footprint. Check RoHS compliance status if environmental regulations apply to the final assembly.
Select this component when a small-signal NPN transistor with moderate voltage ratings and high-frequency capability is required. The 25 V VCEO rating limits suitability for higher voltage rails. Compare hFE minimums against other manufacturers if strict gain consistency is needed. Consider thermal management constraints due to the 350 mW power dissipation limit in the TO-92 package.
The KSP10TA is part of the broader KSP10 family of NPN silicon transistors. This series is widely used in consumer electronics and industrial control systems requiring small-signal amplification or switching. The TA suffix typically denotes the specific tape-and-reel or ammo pack packaging variant within the TO-92 form factor.
Direct substitutes include KSP10BU and BC237 variants, provided pinouts and electrical parameters align. Verify that replacement parts maintain the same TO-92-3 kinked lead configuration to ensure mechanical compatibility without redesigning the PCB layout.