KVX31S1-23-0

Overview

The KVX31S1-23-0 is a silicon hyperabrupt varactor diode manufactured by Microchip Technology. It features a single junction design housed in a surface-mount SOT-23-3 package. The device is rated for a maximum peak reverse voltage of 27 V. Constructed with non-hermetic plastic encapsulation, it is suitable for applications requiring variable capacitance control in RF circuits.

Feature Summary

• Hyperabrupt capacitance-voltage characteristic profile
• Single junction configuration for precise tuning
• Surface-mount SOT-23-3 packaging for compact integration

Applications

• RF filter tuning circuits
• Voltage-controlled oscillator (VCO) frequency adjustment
• Phase-locked loop (PLL) components

Procurement Notes

Verify the specific suffix requirements for your order, as the KVX31S1-23-0/TR variant includes tape and reel packaging. Confirm that the non-hermetic construction aligns with your environmental protection needs. Ensure the 27 V reverse voltage rating meets your circuit's peak operating conditions before finalizing procurement.

Selection Notes

Select this component when a hyperabrupt C-V curve is required for wide tuning range applications. The SOT-23-3 package offers a small footprint for space-constrained designs. Verify that the silicon technology and non-hermetic nature are acceptable for the intended operating environment and reliability standards.

Part Context

This part belongs to the KVX series of silicon TVAR diodes from Microchip Technology. These devices are designed for high-performance RF applications where variable capacitance is critical. The series includes various packages and voltage ratings to support diverse circuit topologies.

Replacement Considerations

Check datasheets for compatible hyperabrupt varactors with similar 27 V ratings and SOT-23-3 footprints. Ensure equivalent capacitance ratios and Q-factors match the original design requirements for seamless substitution.