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L6207Q is listed in the Full Half-Bridge (H Bridge) Drivers range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is IC HALF BRIDGE DRV 2.5A 48VFQFPN. Review the specifications below when checking this part for your BOM.
The L6207Q is a DMOS dual full bridge driver designed for motor control applications, realized in BCD multipower technology. It integrates isolated DMOS power transistors with CMOS and bipolar circuits on the same chip. The device features two independent constant off-time PWM current controllers for chopping regulation. Operating supply voltage ranges from 8 V to 52 V, supporting a peak output current of 2.8 A (1.4 A DC). The typical RDS(on) is 0.73 Ω at TJ = 25 °C, with an operating frequency up to 100 kHz.
Verify package availability as the L6207Q is typically supplied in VQFPN32 packages. Confirm that the specific variant matches the required thermal performance and pinout for your PCB layout. Ensure logic inputs are compatible with your system voltage levels, as they support standard CMOS or TTL interfaces. Check datasheet revisions for any updates regarding mounting recommendations or electrical characteristics changes.
Select the L6207Q when dual full-bridge capability with integrated PWM current control is required. It is suitable for applications needing robust protection against overcurrent and thermal stress. Compare RDS(on) values against other series members if lower conduction losses are critical. Consider the VQFPN32 package size constraints during mechanical design integration.
The L6207Q belongs to the L6207 family of DMOS dual full bridge drivers. It shares core functionalities with related models but offers specific packaging and electrical characteristics optimized for compact motor control designs. The device leverages BCD technology to combine power and control circuits efficiently on a single die.
L6207PD
The L6207Q supports an operating frequency of up to 100 kHz.
Yes, it features non-dissipative overcurrent protection specifically on the high-side power MOSFETs.
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