LMG3522R030QRQSRQ1

Power Driver Modules Overview

The LMG3522R030-Q1 is a 650-V GaN-on-Si FET with an integrated gate driver, protection, and temperature reporting. It features a direct-drive architecture using a series Si FET for safe operation without bias power. The device supports a switching frequency up to 2 MHz and operates from a 7.5 V to 18 V supply. It includes cycle-by-cycle overcurrent and latched short-circuit protection with response times under 100 ns. The RDS(on) is typically 30 mΩ at 25°C. A 9-kHz PWM output encodes the junction temperature.

Power Driver Modules Feature Summary

• Direct-drive GaN architecture with integrated precision gate bias voltage
• Integrated buck-boost converter generating negative voltage for depletion mode turn-off
• Cycle-by-cycle overcurrent and latched short-circuit protection
• Digital temperature reporting via modulated PWM output

Power Driver Modules Applications

• Automotive motor drives
• High-efficiency DC-DC converters
• Industrial motor control systems

Power Driver Modules Procurement Notes

Verify the specific ordering suffix matches the required package type and tape-and-reel specifications. Confirm that the component carries the AEC-Q100 qualification mark for automotive reliability standards. Ensure the datasheet revision aligns with the design requirements for thermal and electrical characteristics.

Power Driver Modules Selection Notes

Select this component for applications requiring high power density and fast switching speeds. Consider the adjustable slew rate capability for EMI mitigation. Evaluate the thermal resistance metrics for heat dissipation in the chosen enclosure. Verify compatibility with the intended gate drive logic levels and supply voltages.

Power Driver Modules Part Context

This part belongs to the LMG352xR030-Q1 family of integrated GaN power switches. It is designed to replace traditional silicon MOSFETs in high-frequency applications. The integration reduces external component count and simplifies layout requirements compared to discrete solutions.

Power Driver Modules Replacement Considerations

Check pinout compatibility with existing designs. Verify that the replacement can handle the same surge voltage conditions. Ensure the thermal management solution accommodates the new device's power dissipation profile.

Power Driver Modules FAQ

How does the device handle third-quadrant conduction?

The GaN FET conducts in the third quadrant when the drain voltage is taken sufficiently negative relative to the source, turning on the channel similarly to a body diode but with higher voltage drop.

What is the function of the RDRV pin?

The RDRV pin allows adjustment of the turn-on drive strength by connecting an external resistor to the SOURCE pin, enabling control over the slew rate for EMI optimization.

How is the junction temperature reported?

The TEMP pin outputs a fixed 9-kHz pulsed waveform where the duty cycle corresponds to the die temperature, allowing digital monitoring without analog-to-digital conversion.