Power Driver Modules LMG3522R030RQST product image

LMG3522R030RQST

$25.26
  • Description:650-V 30-M GAN FET WITH INTEGRAT
  • Series:-

SKU:57632aed511b Category: Brand:

  
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LMG3522R030RQST is listed in the Power Driver Modules range at ChipApex. The manufacturer field lists Texas Instruments. Its product description is 650-V 30-M GAN FET WITH INTEGRAT. Review the specifications below when checking this part for your BOM.

Power Driver Modules specifications for LMG3522R030RQST

  • Description:650-V 30-M GAN FET WITH INTEGRAT
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Type:MOSFET
  • Configuration:Half Bridge Inverter
  • Current:55 A
  • Voltage:650 V
  • Voltage - Isolation:-
  • Mounting Type:Surface Mount
  • Package / Case:52-VQFN Exposed Pad
  • Grade:-
  • Qualification:-

Power Driver Modules datasheet and documents for LMG3522R030RQST

LMG3522R030RQST

Power Driver Modules Overview

The LMG3522R030RQS is a 650V GaN FET with an integrated driver, protection, and temperature reporting. It features a 30mΩ on-resistance and operates from a 7.5V to 18V supply. The device supports switching frequencies up to 2MHz and offers adjustable slew rates from 20V/ns to 150V/ns for EMI mitigation. It includes cycle-by-cycle overcurrent and latched short-circuit protection with less than 100ns response time. The component withstands 720V surge during hard-switching and provides digital temperature reporting via PWM output.

Power Driver Modules Feature Summary

  • Integrated high-precision gate bias voltage for enhanced switching SOA
  • Adjustable drive strength allows active control of EMI and switching performance
  • Robust protection mechanisms including overcurrent, short-circuit, and overtemperature monitoring
  • Digital temperature reporting simplifies device loading management

Power Driver Modules Applications

  • Switch-mode power converters
  • Merchant network and server PSU
  • Solar inverters and industrial motor drives
  • Uninterruptible power supplies

Power Driver Modules Procurement Notes

Verify the specific ordering suffix RQS corresponds to the 52-pin VQFN package configuration. Confirm that the application design accounts for the top-side cooled thermal pad requirements. Ensure the external buck-boost inductor and bypass capacitors match the recommended operating conditions for stable internal converter operation.

Power Driver Modules Selection Notes

Select this component when designing high-density power systems requiring integrated protection and temperature feedback. The absence of zero-voltage or zero-current detection distinguishes it from the LMG3526R030 and LMG3527R030 variants. Consider the 30mΩ on-resistance for conduction loss optimization in medium-to-high current applications.

Power Driver Modules Part Context

This part belongs to the LMG352xR030 family of 650V GaN FETs from Texas Instruments. It shares the same core power stage and protection logic as the LMG3526R030 and LMG3527R030 but lacks the specialized soft-switching detection pins. The RQS suffix denotes the specific 52-pin VQFN package variant used for board mounting.

Power Driver Modules Replacement Considerations

LMG3522R030RQT

Power Driver Modules FAQ

Does the LMG3522R030 include zero-voltage detection?

No, the LMG3522R030 does not include zero-voltage detection (ZVD). This feature is only available in the LMG3526R030 variant.

How is the junction temperature reported?

The device reports temperature through a variable duty cycle PWM output on the TEMP pin. The duty cycle corresponds to the junction temperature, allowing for simplified thermal management.

What is the maximum switching frequency supported?

The device supports a maximum switching frequency of 2MHz, which may be derated based on the VDD supply voltage and current rating requirements.

LMG3522R030RQSTLMG3522R030RQST
$25.26
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