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LMG3522R030RQST is listed in the Power Driver Modules range at ChipApex. The manufacturer field lists Texas Instruments. Its product description is 650-V 30-M GAN FET WITH INTEGRAT. Review the specifications below when checking this part for your BOM.
The LMG3522R030RQS is a 650V GaN FET with an integrated driver, protection, and temperature reporting. It features a 30mΩ on-resistance and operates from a 7.5V to 18V supply. The device supports switching frequencies up to 2MHz and offers adjustable slew rates from 20V/ns to 150V/ns for EMI mitigation. It includes cycle-by-cycle overcurrent and latched short-circuit protection with less than 100ns response time. The component withstands 720V surge during hard-switching and provides digital temperature reporting via PWM output.
Verify the specific ordering suffix RQS corresponds to the 52-pin VQFN package configuration. Confirm that the application design accounts for the top-side cooled thermal pad requirements. Ensure the external buck-boost inductor and bypass capacitors match the recommended operating conditions for stable internal converter operation.
Select this component when designing high-density power systems requiring integrated protection and temperature feedback. The absence of zero-voltage or zero-current detection distinguishes it from the LMG3526R030 and LMG3527R030 variants. Consider the 30mΩ on-resistance for conduction loss optimization in medium-to-high current applications.
This part belongs to the LMG352xR030 family of 650V GaN FETs from Texas Instruments. It shares the same core power stage and protection logic as the LMG3526R030 and LMG3527R030 but lacks the specialized soft-switching detection pins. The RQS suffix denotes the specific 52-pin VQFN package variant used for board mounting.
LMG3522R030RQT
No, the LMG3522R030 does not include zero-voltage detection (ZVD). This feature is only available in the LMG3526R030 variant.
The device reports temperature through a variable duty cycle PWM output on the TEMP pin. The duty cycle corresponds to the junction temperature, allowing for simplified thermal management.
The device supports a maximum switching frequency of 2MHz, which may be derated based on the VDD supply voltage and current rating requirements.
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