Power Driver Modules LMG3526R030RQSR product image

LMG3526R030RQSR

$23.53
  • Description:650-V 30-M GAN FET WITH INTEGRAT
  • Series:-

SKU:c47d5e7e34a3 Category: Brand:

  
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LMG3526R030RQSR is listed in the Power Driver Modules range at ChipApex. The manufacturer field lists Texas Instruments. Its product description is 650-V 30-M GAN FET WITH INTEGRAT. Review the specifications below when checking this part for your BOM.

Power Driver Modules specifications for LMG3526R030RQSR

  • Description:650-V 30-M GAN FET WITH INTEGRAT
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Type:MOSFET
  • Configuration:Half Bridge Inverter
  • Current:55 A
  • Voltage:650 V
  • Voltage - Isolation:-
  • Mounting Type:Surface Mount, Wettable Flank
  • Package / Case:52-VQFN Exposed Pad
  • Grade:-
  • Qualification:-

Power Driver Modules datasheet and documents for LMG3526R030RQSR

LMG3526R030RQSR

Power Driver Modules Overview

The LMG3526R030RQSR is a 650V GaN FET with integrated driver, protection, and temperature reporting. It features a 30mΩ on-resistance at 25°C and supports up to 150V/ns slew rate. The device operates from a 7.5V to 18V supply and includes zero-voltage detection (ZVD). Protection mechanisms include cycle-by-cycle overcurrent, latched short-circuit, and self-protection against overtemperature and UVLO. It utilizes a top-side cooled 12mm × 12mm VQFN package.

Power Driver Modules Feature Summary

  • Integrated high-precision gate bias for optimized switching performance
  • Zero-voltage detection (ZVD) feature facilitates soft-switching converters
  • Robust protection including cycle-by-cycle overcurrent and latched short-circuit
  • Digital temperature PWM output for advanced power management

Power Driver Modules Applications

  • Switch-mode power converters
  • Merchant network and server PSU
  • Solar inverters and industrial motor drives

Power Driver Modules Procurement Notes

Verify the specific suffix RQS corresponds to the 52-pin VQFN package configuration. Confirm that the ordering part number matches the exact ZVD-enabled variant required for your design. Ensure compatibility with the recommended operating conditions regarding supply voltage and thermal management requirements specified in the datasheet.

Power Driver Modules Selection Notes

Select this component when zero-voltage switching support is required within a 650V GaN topology. Consider the adjustable slew rate capability for EMI mitigation. Evaluate the thermal resistance metrics for heat dissipation needs. Compare against LMG3527R030 if zero-current detection is preferred instead of zero-voltage detection.

Power Driver Modules Part Context

This device belongs to the LMG352xR030 family of integrated GaN FETs. It shares the same core power stage and protection architecture as the LMG3522R030 and LMG3527R030. The primary distinction lies in the detection features: LMG3526R030 provides ZVD, while LMG3527R030 offers ZCD. All variants utilize the same 52-pin VQFN package.

Power Driver Modules Replacement Considerations

LMG3527R030RQSR

Power Driver Modules FAQ

What is the function of the ZVD pin?

The ZVD pin outputs a pulse signal indicating that zero-voltage switching has been achieved in the current switching cycle.

How is the slew rate controlled?

The slew rate is adjusted by connecting a resistor from the RDRV pin to the SOURCE pin, allowing control between 20V/ns and 150V/ns.

What fault conditions trigger the FAULT pin?

The FAULT pin asserts low during overcurrent, short-circuit, overtemperature, VDD UVLO, or high-impedance RDRV pin conditions.

LMG3526R030RQSRLMG3526R030RQSR
$23.53
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