LMG3526R030RQST

Power Driver Modules Overview

The LMG3526R030RQST is a 650V GaN FET with an integrated driver, protection, and temperature reporting. It features a 30mΩ on-resistance at 25°C and operates from a 7.5V to 18V supply. The device supports switching frequencies up to 2MHz with adjustable slew rates ranging from 20V/ns to 150V/ns. It includes zero-voltage detection (ZVD) for soft-switching applications. Protection mechanisms include cycle-by-cycle overcurrent, latched short-circuit, and self-protection against internal overtemperature and UVLO conditions.

Power Driver Modules Feature Summary

• Integrates a high-precision gate bias and silicon driver to enable switching speeds up to 150V/ns while maintaining higher switching SOA compared to discrete drivers.
• Features advanced power management including digital temperature reporting via PWM output and a ZVD pin that signals when zero-voltage switching is achieved.
• Provides robust protection with cycle-by-cycle overcurrent and latched short-circuit detection responding in under 100ns, alongside withstands of 720V surge during hard-switching.

Power Driver Modules Applications

• Switch-mode power converters
• Merchant network and server PSU
• Solar inverters and industrial motor drives

Power Driver Modules Procurement Notes

Verify the specific ordering suffix RQST against the manufacturer's official documentation to confirm package type and reel specifications. Ensure compatibility with the required thermal pad soldering requirements for the top-side cooled VQFN package. Confirm that the design accounts for the non-solder mask defined pads on the PCB landing area to ensure proper anchoring and electrical isolation.

Power Driver Modules Selection Notes

Select this component for designs requiring integrated GaN power stages with built-in soft-switching capabilities. The LMG3526R030 variant is specifically chosen for its zero-voltage detection feature, which facilitates efficient ZVS operation. Consider the adjustable slew rate control for EMI mitigation and the integrated buck-boost converter for simplified negative gate drive generation without external complex circuitry.

Power Driver Modules Part Context

This device belongs to the LMG352xR030 family of 650V GaN FETs with integrated drivers. It shares the same core power stage and protection logic with the LMG3522R030 and LMG3527R030. The primary distinction lies in the detection features: the LMG3526R030 includes Zero-Voltage Detection (ZVD), whereas the LMG3527R030 includes Zero-Current Detection (ZCD). The LMG3522R030 lacks both specialized detection pins.

Power Driver Modules Replacement Considerations

LMG3522R030RQS

Power Driver Modules FAQ

What is the function of the ZVD pin on the LMG3526R030?

The ZVD pin provides a push-pull digital output that asserts low when the device achieves zero-voltage switching in the current switching cycle, facilitating the design of soft-switching converters.

How is the gate drive slew rate controlled?

The slew rate is controlled by connecting a resistor from the RDRV pin to the SOURCE pin. Tying RDRV to SOURCE enables the maximum 150V/ns slew rate, while tying it to LDO5V enables 100V/ns.

What protection features are included in the device?

The device includes cycle-by-cycle overcurrent protection, latched short-circuit protection with less than 100ns response time, self-protection from internal overtemperature, and UVLO monitoring for both VDD and VNEG supplies.