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LND01K1-G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 9V 330MA SOT23-5. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for LND01K1-G
- Description：MOSFET N-CH 9V 330MA SOT23-5
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：9 V
- Current - Continuous Drain (Id) @ 25°C：330mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：0V
- Rds On (Max) @ Id, Vgs：1.4Ohm @ 100mA, 0V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：+0.6V, -12V
- Input Capacitance (Ciss) (Max) @ Vds：46 pF @ 5 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-25°C ~ 125°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-5
- Package / Case：SC-74A, SOT-753
Single FETs, MOSFETs datasheet and documents for LND01K1-G
Single FETs, MOSFETs Overview
The LND01K1-G is a lateral N-channel depletion-mode MOSFET manufactured by Microchip Technology. It features a 5-lead SOT-23 package and operates within an ambient temperature range of -25°C to +125°C. The device provides a drain-to-source breakdown voltage (BVDSX) of 9V and a saturated drain current (IDSS) of 300mA at VGS=0V. Its maximum static on-state resistance (RDS(ON)) is 1.4Ω, with a typical forward transconductance (GFS) of 200 mmho. Key switching parameters include a turn-on delay time of 3.8ns and a rise time of 11ns.
Single FETs, MOSFETs Feature Summary
- Bi-directional conduction capability for source and drain terminals
- Depletion-mode operation providing normally-on functionality
- Lateral DMOS structure ensuring high input impedance and thermal stability
Single FETs, MOSFETs Applications
- Normally-on switches
- Solid-state relays
- Constant current sources
- Analog switches
Single FETs, MOSFETs Procurement Notes
Verify the component against the official Microchip datasheet DS20005696A to confirm authenticity. Ensure the part number matches the specific K1 package variant. Check RoHS compliance status as indicated in the ordering information. Confirm that the supplier provides traceability documentation consistent with Microchip's quality management system standards.
Single FETs, MOSFETs Selection Notes
Select this component when a normally-on switch or constant current source is required in low-voltage applications. The 9V breakdown voltage limits suitability for higher voltage circuits. Consider the 5-lead SOT-23 package constraints for thermal dissipation and board space. Evaluate the bi-directional nature if reverse current flow is necessary in the design.
Single FETs, MOSFETs Part Context
This device belongs to the LND series of lateral N-channel depletion-mode MOSFETs produced by Microchip Technology. It utilizes an advanced silicon gate manufacturing process designed to combine bipolar power handling capabilities with MOS high input impedance. The product line emphasizes ease of paralleling and low power drive requirements for efficient circuit integration.
Single FETs, MOSFETs Replacement Considerations
Consult Microchip technical support for verified substitute part numbers. Cross-referencing requires matching depletion-mode characteristics, voltage ratings, and package dimensions.
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