LND250K1-G

$0.46

Description：MOSFET N-CH 500V 13MA SOT23
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3cff21ccb4c2 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

LND250K1-G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 500V 13MA SOT23. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for LND250K1-G

Description：MOSFET N-CH 500V 13MA SOT23
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel, Depletion Mode
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：13mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)：0V
Rds On (Max) @ Id, Vgs：1000Ohm @ 500µA, 0V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：10 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23 (TO-236AB)
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for LND250K1-G

LND250K1-G

Single FETs, MOSFETs Overview

The LND250K1-G is a high-voltage N-channel Depletion-Mode (normally-on) DMOS FET from Microchip Technology. It features a Drain-to-Source Breakdown Voltage (BVDSX) of 500 V and a maximum Static Drain-to-Source On-State Resistance (RDS(ON)) of 1000 Ω at VGS = 0V. The device supports a minimum Saturated Drain-to-Source Current (IDSS) of 1 mA. It operates within an ambient temperature range of –55°C to +150°C. The component is housed in a 3-lead SOT-23 package, which has a thermal resistance (θJA) of 203 °C/W. Input capacitance (CISS) is typically 7.5 pF.

Single FETs, MOSFETs Feature Summary

Free from secondary breakdown for reliable operation
Integral source-drain diode included
High input impedance with low input capacitance
ESD gate protection integrated

Single FETs, MOSFETs Applications

Solid-State Relays
Normally-On Switches
Constant-Current Sources
Input Protection Circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix K1 confirms the 3-lead SOT-23 package configuration. Ensure the G suffix indicates lead-free and RoHS-compliant packaging as per Microchip standards. Confirm the media type corresponds to reel packaging if automated assembly is required. Cross-reference the datasheet revision A document number DS20005454A for accurate electrical specifications.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage depletion-mode applications requiring normally-on behavior. The 500 V breakdown voltage suits high-side switching or constant-current source designs. Consider the SOT-23 package constraints regarding power dissipation and thermal management. Verify that the low IDSS and high RDS(ON) characteristics align with the specific current requirements of the target circuit design.

Single FETs, MOSFETs Part Context

The LND250 is part of the LND150/LND250 family of N-Channel Depletion-Mode DMOS FETs manufactured by Microchip Technology. These devices utilize lateral DMOS technology and are designed for high-voltage applications. The LND250 variant specifically offers a 500 V breakdown rating, distinguishing it from lower voltage counterparts in the series.