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LQA12B300C is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Power Integrations. Its product description is DIODE ARR SCHOTT 300V 6A TO263AB. Review the specifications below when checking this part for your BOM.
The LQA12B300C is a Qspeed™ family common-cathode diode rated for 300 V peak repetitive reverse voltage and 12 A average forward current per device. It features low reverse recovery charge (QRR) of 27 nC at 125 °C and low reverse recovery current (IRRM) of 1.87 A. The component utilizes TO-263AB surface-mount packaging, operates within a junction temperature range of -55 °C to 150 °C, and supports high dI/dt switching capabilities up to 1000 A/µs.
Verify the specific package type matches the application requirements, as the LQA12B300C uses TO-263AB surface-mount packaging. Confirm that the thermal management design accommodates the specified junction-to-case thermal resistance values. Ensure the operating conditions remain within the absolute maximum ratings defined in the datasheet to maintain device reliability and performance standards.
Select this component when minimizing snubber circuit complexity is required due to its soft recovery profile. Consider the TO-263AB package for surface-mount assembly needs. Evaluate the thermal derating curves to ensure adequate heat dissipation under continuous load conditions. Verify compatibility with high-frequency switching applications requiring low reverse recovery losses.
This part belongs to the Qspeed™ family of silicon diodes from Power Integrations. It shares the core technology with the LQA12T300C but differs in physical packaging. The series is designed to offer the lowest reverse recovery charge among comparable 300 V silicon diodes, targeting efficiency improvements in power conversion systems.
The LQA12T300C serves as a pin-compatible alternative utilizing TO-220AB through-hole packaging. Direct substitution requires verifying mechanical mounting constraints and thermal interface compatibility between the surface-mount and through-hole variants.
The typical reverse recovery charge is 27 nC at a junction temperature of 125 °C.
The device's soft recovery characteristics are designed to eliminate the need for snubber circuits in many applications.
The maximum non-repetitive peak surge current per diode is 350 A for a half-cycle sinusoid at TC = 25 °C.
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