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LQA40B200C is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Power Integrations. Its product description is DIODE ARRAY GP 200V 20A TO-263AB. Review the specifications below when checking this part for your BOM.
The LQA40B200C is a 200 V, 40 A common-cathode diode from the Qspeed family. It features an average forward current of 20 A per diode and a peak repetitive reverse voltage of 200 V. The device exhibits a typical reverse recovery charge (QRR) of 61 nC at 125 °C and a maximum reverse recovery current (IRRM) of 3.7 A at 125 °C. Softness (tb/ta) is typically 0.32 at 125 °C. It operates within a junction temperature range of -55 to 150 °C and utilizes a TO-263AB surface-mount package.
Verify the specific ordering suffix 'B' corresponds to the TO-263AB surface-mount package configuration as documented in the manufacturer's ordering information table. Confirm that the component meets RoHS compliance standards and utilizes lead-free plating with halogen-free mold compound per IEC 61249-2-21 specifications before finalizing procurement.
Select this component for applications requiring extremely fast switching capabilities and reduced EMI filter component size. The soft recovery profile eliminates the need for snubber circuits, thereby increasing overall system efficiency. Ensure thermal management accommodates the specified junction-to-case thermal resistance values for reliable operation under high-frequency conditions.
This part belongs to the Qspeed family of silicon diodes manufactured by Power Integrations. The series is characterized by having the lowest QRR among comparable 200 V silicon diodes. The 'B' suffix specifically designates the TO-263AB surface-mount variant, while the 'T' suffix denotes the through-hole TO-220AB package.
LQA40T200C serves as the direct through-hole equivalent within the same product family.
The typical softness factor is 0.32 at a junction temperature of 125 °C.
No, its soft recovery characteristics are designed to eliminate the need for snubber circuits.
The device supports a non-repetitive peak surge current of 350 A per diode for a half-cycle sinusoid at TC = 25 °C.
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