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The LS312 is a tightly matched, monolithic dual NPN bipolar junction transistor (BJT) designed for general amplification and high-frequency applications. It features a collector-emitter breakdown voltage of 60V and a maximum collector current of 40mA. The device operates with a saturation voltage of 250mV and has a transition frequency of 200MHz. Power dissipation is rated at 400mW, with a base-emitter voltage of 6V. Packaged in a TO-71-6 metal can, it ensures precise matching between the two internal transistors.
Verify the specific ordering suffix to ensure compatibility with required packaging options such as bulk or tape-and-reel configurations. Confirm that the TO-71-6 metal can package meets thermal and mechanical constraints for the target assembly process. Cross-reference manufacturer datasheets for absolute maximum ratings to prevent overstress conditions during operation.
Select this component when precise matching between dual transistors is critical for circuit performance, particularly in differential stages. The 200MHz transition frequency supports high-speed operations, while the 60V rating provides adequate headroom for standard low-voltage systems. Consider the through-hole mounting requirement associated with the TO-71-6 package during PCB layout.
The LS312 belongs to the LS310 series from Linear Integrated Systems, which specializes in small-signal transistors. This series includes variants available in multiple packages like TO-78 and SOIC, but the LS312 specifically utilizes the TO-71-6 metal can form factor. It serves as a specialized alternative to generic dual transistors where manufacturing tolerances must be minimized.
Direct substitutes within the same family include other LS310 series variants if package flexibility exists. Verify pinout compatibility and electrical parameters against potential cross-brand alternatives to ensure functional equivalence in high-frequency and matching-sensitive designs.