LS313 TO-78 6L

Overview

The LS313 is a high voltage super-beta monolithic dual NPN transistor manufactured by Linear Integrated Systems. It features very high current gain, low output capacitance, and tight base-emitter voltage matching. Key electrical parameters include a typical hFE of ≥2000 at 1.0µA collector current, maximum Cobo of ≤2.0pF, and a typical |VBE1 - VBE2| difference of 0.2mV. The transition frequency (fT) is rated at 100MHz. Absolute maximum ratings specify a collector current limit of 5mA and an operating junction temperature range up to the device's maximum thermal limits.

Feature Summary

• Very high current gain suitable for low-level signal amplification
• Low output capacitance for improved high-frequency performance
• Tight base-emitter voltage matching for precision differential applications

Applications

• Precision analog signal processing circuits
• High-gain amplifier stages requiring low input bias current
• Differential amplifier configurations utilizing matched transistor pairs

Procurement Notes

Verify the specific suffix code against the manufacturer's official datasheet to confirm pinout orientation and package variant. Ensure the ordering part number matches the exact electrical grade required for your design. Cross-reference the manufacturer's latest documentation to confirm availability status and any potential obsolescence notices before finalizing procurement plans.

Selection Notes

Select this component when circuit requirements demand extremely high beta values at microampere current levels. The tight VBE matching makes it ideal for applications where offset voltage minimization is critical. Consider the 5mA absolute maximum collector current limit when designing load conditions to ensure operation within safe thermal and electrical boundaries defined in the absolute maximum ratings.

Part Context

This device belongs to the LS30x series of high voltage super-beta monolithic dual NPN transistors from Linear Integrated Systems. The series is characterized by integrated dual transistor pairs on a single die, offering superior matching characteristics compared to discrete matched pairs. This integration reduces board space and improves reliability in precision analog applications.

FAQ

What is the typical current gain (hFE) specification?

The typical current gain is specified as ≥2000 at a collector current of 1.0µA.

What is the maximum allowed collector current?

The absolute maximum rating for collector current is 5mA.

How does the base-emitter voltage matching compare between the two transistors?

The typical difference between the base-emitter voltages (|VBE1 - VBE2|) is 0.2mV.