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Product Detailed Parameters
- Description：TRANS 2PNP 25V 10MA SOT-23-6
- Series：-
- Mfr：Linear Integrated Systems, Inc.
- Package：Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：10mA
- Voltage - Collector Emitter Breakdown (Max)：25V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 100µA, 1mA
- Current - Collector Cutoff (Max)：200pA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 1mA, 5V
- Power - Max：500mW
- Frequency - Transition：200MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-23-6
- Grade：-
- Qualification：-
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Overview
The LS350 is a general-purpose monolithic dual PNP transistor from Linear Integrated Systems, packaged in SOT-23 6L. It features high DC current gain (hFE ≥ 100 at 10µA to 1mA) and tight base-emitter voltage matching (|VBE1-VBE2| = 0.4mV typ). The device offers a typical transition frequency (fT) of 275 MHz at 1mA and supports collector currents up to 10mA with a collector-base breakdown voltage of 25V minimum. Power dissipation is rated at 250mW per side in free air.
Feature Summary
- High DC current gain across low to moderate collector currents
- Tight base-emitter voltage matching for precision applications
- High transition frequency suitable for RF and analog circuits
Applications
- Precision differential amplifier stages
- Low-noise analog signal processing
- Current mirror circuits requiring matched characteristics
Procurement Notes
Verify the specific suffix or tape-and-reel designation against the manufacturer's official ordering guide to ensure correct packaging. Confirm that the SOT-23 6L package dimensions align with your PCB footprint requirements before finalizing procurement.
Selection Notes
Select the LS350 when tight VBE matching and high hFE are required in a compact surface-mount package. Compare its 25V BVCEO rating against circuit voltage requirements. Consider the LS351 or LS352 if higher breakdown voltages are needed while maintaining similar matching characteristics.
Part Context
This component belongs to the LS35x family of monolithic dual PNP transistors, which includes the LS351 and LS352 variants. These devices share identical pinouts and physical packages but differ primarily in their collector-base and collector-emitter breakdown voltage ratings, allowing designers to choose based on specific voltage constraints.
Replacement Considerations
Public confirmed substitutes include the LS351 and LS352 from Linear Integrated Systems. Verify that the replacement part meets the 25V minimum BVCEO requirement; otherwise, the LS351 (45V) or LS352 (60V) may be used if higher voltage tolerance is acceptable.
FAQ
What is the typical base-emitter voltage mismatch for the LS350?
The typical |VBE1-VBE2| mismatch is 0.4mV at IC = 10 µA and VCE = 5V.
What is the maximum reverse base-to-emitter voltage allowed?
The reverse base-to-emitter voltage must never exceed 6.0 volts.
How does the LS350's fT compare to other models in the series?
The LS350 has a typical fT of 275 MHz at 1mA, which is consistent with the high-frequency performance expected from this general-purpose dual PNP series.
