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The LS3956 is a monolithic dual N-channel JFET amplifier from Linear Integrated Systems, housed in TO-71 packages. It provides matched transistor pairs with low drift and leakage characteristics. Key electrical parameters include a maximum gate-to-source breakdown voltage of 60V, typical transconductance of 2000 µS at full conduction, and typical drain current of 2 mA. The device exhibits a maximum temperature drift of 50 µV/°C, typical offset voltage of 15 mV, and typical noise of 10 nV/√Hz.
Verify the specific package type (TO-71) and grade designation against official datasheets before procurement. Confirm compliance with RoHS standards as indicated in the product documentation. Ensure that the operating conditions remain within the absolute maximum ratings to maintain device serviceability and prevent impairment of semiconductor functionality.
Select the LS3956 when low drift and low leakage are critical requirements for dual JFET applications. Compare its 50 µV/°C drift specification against other grades like the LS3954A or LS3958 based on precision needs. Consider the TO-71 package availability if hermetic sealing is required for the specific deployment environment.
Linear Integrated Systems specializes in high-performance discrete semiconductors using proprietary processes. The LS3956 belongs to a family including the LS3954A, LS3954, LS3955, and LS3958, differentiated primarily by drift and offset voltage specifications. These devices are designed for demanding analog signal processing tasks requiring high precision and stability.
Substitutes within the same family include the LS3954A, LS3954, LS3955, and LS3958. Verify that the alternative part's drift and offset voltage specifications meet the application requirements, as these parameters vary across the series.
The maximum gate-to-source breakdown voltage (BVGSS) is 60V.
The typical transconductance (gfss) at full conduction is 2000 µS.
The maximum temperature drift (|∆VGS1-2/∆T|) for the LS3956 is 50 µV/°C.