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Product Detailed Parameters
- Description：JFET 2N-CH 25V 8SOIC
- Series：LS5911
- Mfr：Linear Integrated Systems, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：7 mA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：5pF @ 10V
- Resistance - RDS(On)：-
- Power - Max：500 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The LS5911 is a low noise wideband monolithic dual N-channel JFET amplifier in an SOIC-8 package. It features a typical forward transconductance of 4000 µS at 1kHz and up to 7000 µS at 100MHz. Equivalent input noise voltage is typically 4 nV/√Hz at 10kHz and 7 nV/√Hz at 100Hz. Gate-to-source breakdown voltage is -25V, with a maximum continuous power dissipation of 500mW. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Monolithic dual N-channel JFET architecture
- Low noise performance suitable for precision applications
- High transconductance across wide frequency range
- Built-in current limit and over temperature protection
Applications
- SCSI-2 active termination
- Precision instrumentation amplifiers
- Low noise preamplifier stages
- Wideband signal processing circuits
Procurement Notes
Verify the specific suffix matches the required package type (SOIC-8) and pinout configuration (A or B). Confirm RoHS compliance status if required by your manufacturing process. Ensure the ordering code aligns with the exact electrical tolerance class needed for your design specifications.
Selection Notes
Select this component when low noise and high bandwidth are critical requirements for dual JFET applications. The LS5911 offers improved performance over legacy parts like the 2N5911. Consider thermal derating requirements above 25°C due to the 500mW power dissipation limit. Verify that the -25V gate-to-source voltage rating meets your circuit's maximum operating conditions.
Part Context
This device serves as an improved replacement for older discrete JFET pairs such as the 2N5911 and 2N5912. Manufactured by Linear Integrated Systems, it provides matched electrical characteristics within a single integrated package. The technology leverages expertise from previous semiconductor developments to ensure reliability and consistent performance in demanding analog environments.
Replacement Considerations
Direct replacements include the 2N5911 and 2N5912 discrete JFET pairs, though integration benefits differ. Check datasheet compatibility for pinout variations between SOIC-A and SOIC-B configurations before substitution.
