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Product Detailed Parameters
- Description：JFET 2N-CH 25V 8SOIC
- Series：LS5912
- Mfr：Linear Integrated Systems, Inc.
- Package：Tube
- FET Type：2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：7 mA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：5pF @ 10V
- Resistance - RDS(On)：-
- Power - Max：500 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The LS5912 is a monolithic dual N-channel JFET amplifier in an SOIC-8 package. It features low noise with equivalent input voltage of 4 nV/√Hz at 10kHz and high transconductance (gfs) ranging from 4000 to 10000 µS at 1kHz. The device supports a gate-to-source breakdown voltage of -25V and operates within a temperature range of -55°C to +150°C. Key electrical characteristics include a typical noise figure of 1 dB, input capacitance of 5 pF, and common mode rejection ratio of 85 dB.
Feature Summary
- Monolithic dual N-channel JFET architecture for precise signal amplification
- Ultra-low noise performance suitable for sensitive analog front ends
- High transconductance ensuring robust gain stability across frequencies
- Wide operating temperature range for industrial and harsh environments
Applications
- Low noise preamplifiers for instrumentation systems
- High impedance buffer stages in data acquisition circuits
- Precision analog signal conditioning modules
- Audio processing equipment requiring minimal distortion
Procurement Notes
Verify the specific suffix and revision level against the latest Linear Integrated Systems datasheet Doc 201132 Rev#A9. Confirm pinout compatibility with SOIC-B configuration if replacing legacy parts. Ensure environmental specifications meet project requirements for storage and operating temperatures. Cross-reference absolute maximum ratings to prevent overstress during design validation.
Selection Notes
Select the LS5912 when low noise and high transconductance are critical for dual-channel applications. Compare gfs ranges and noise figures against alternatives like the 2N5912. Consider the SOIC-8 package constraints for PCB layout. Evaluate thermal derating requirements above 25°C based on total power dissipation limits.
Part Context
Linear Integrated Systems produces precision semiconductor components, leveraging expertise from companies like Intersil and Union Carbide. The LS5912 serves as an improved replacement for legacy discrete JFETs, offering matched electrical characteristics in a compact integrated form factor. This component belongs to a family including LS5911 and LS5912C variants.
Replacement Considerations
Publicly confirmed substitutes include SILICONIX, FAIRCHILD, and NATIONAL 2N5912 devices. Verify pinout alignment between SOIC-A and SOIC-B configurations when transitioning from older packages. Check matching electrical characteristics such as differential gate voltage and saturation current ratios for circuit compatibility.
