ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：JFET 2N-CH 25V SOT23-6
- Series：LS5912C
- Mfr：Linear Integrated Systems, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：7 mA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：5pF @ 10V
- Resistance - RDS(On)：-
- Power - Max：500 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-23-6
- Grade：-
- Qualification：-
Download product information
Overview
The LS5912C is a monolithic dual N-channel JFET amplifier in a SOT-23 package. It features low noise with an equivalent input voltage of 4 nV/√Hz at 10kHz and high transconductance (gfs) ranging from 4000 to 10000 µS at 1kHz. The device supports a gate-to-source breakdown voltage of -25V, operates within a temperature range of -55°C to +150°C, and dissipates up to 500mW continuously.
Feature Summary
- Monolithic dual N-channel JFET architecture
- Low noise performance suitable for precision applications
- High transconductance for wideband signal processing
- Improved replacement for legacy discrete JFETs
Applications
- Precision analog signal amplification
- Wideband instrumentation circuits
- Low-noise preamplifier stages
- Audio and RF front-end processing
Procurement Notes
Verify the component matches the specific LS5912C variant rather than the LS5911 or LS5912, as electrical characteristics differ. Confirm the SOT-23 package type aligns with board layout requirements. Ensure the supplier provides documentation confirming RoHS compliance as indicated in the model designation. Cross-reference datasheet revision A9 for accurate parameter limits.
Selection Notes
Select this component when low noise and high bandwidth are critical for dual-channel JFET applications. The LS5912C offers higher transconductance compared to the LS5911, making it suitable for demanding signal integrity tasks. Consider the SOT-23 footprint for space-constrained designs requiring improved performance over older discrete solutions like the 2N5912.
Part Context
Linear Integrated Systems manufactures the LS5912C as part of a family including the LS5911 and LS5912. These devices serve as modern replacements for legacy silicon JFETs such as the 2N5911 and 2N5912. The company specializes in precision semiconductor components, leveraging expertise from previous industry leaders to deliver high-quality integrated circuits.
Replacement Considerations
The LS5912C is documented as an improved replacement for the SILICONIX, FAIRCHILD, and NATIONAL 2N5911 and 2N5912. Verify pinout compatibility and electrical parameter margins before substituting these legacy discrete parts.
